5KASMC30AHM3_A/H

5KASMC10A thru 5KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • 5000 W peak pulse power capability with a 10/1000 μs waveform SMC (DO-214AB) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 PPPM (10 x 1000 μs) 5000 W PD 6.5 W TJ max. 185 °C Polarity Unidirectional Package SMC (DO-214AB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) PPPM (1) 5000 W Peak power pulse current with a 10/1000 μs waveform (fig. 1) IPPM (1) See next table A Power dissipation on infinite heatsink, TM = 50 °C PD 6.5 W Operating junction and storage temperature range TJ, TSTG -65 to +185 °C Note (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A Revision: 19-Jan-2024 Document Number: 89432 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5KASMC10A thru 5KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. NOM. TEST CURREN T IT (mA) MAX. MAXIMU M MAXIMU REVERS STAND-O M E FF REVERSE LEAKAG VOLTAGE LEAKAG E VWM E AT VWM AT VWM (V) TJ = 150 IR (μA) °C ID (μA) MAXIMU M PEAK PULSE SURGE CURREN T IPPM (2) (A) MAXIMU M CLAMPIN G VOLTAGE AT IPPM VC (V) TYPICAL TEMP. COEFFICIEN T OF VBR (3) αT (%/°C) 5KASMC10A 5AX 11.1 11.7 12.3 1.0 10 20.0 500 294.1 17.0 0.069 5KASMC12A 5BE 13.3 14.0 14.7 1.0 12 10.0 300 251.3 19.9 0.074 5KASMC13A 5BG 14.4 15.2 15.9 1.0 13 10.0 300 232.6 21.5 0.076 5KASMC16A 5BP 17.8 18.8 19.7 1.0 16 2.0 50 192.3 26.0 0.081 5KASMC17A 5BR 18.9 19.9 20.9 1.0 17 2.0 50 181.2 27.6 0.082 5KASMC18A 5BT 20.0 21.1 22.1 1.0 18 2.0 50 171.2 29.2 0.083 5KASMC20A 5BV 22.2 23.4 24.5 1.0 20 2.0 50 154.3 32.4 0.085 5KASMC22A 5BX 24.4 25.7 26.9 1.0 22 2.0 50 140.8 35.5 0.086 5KASMC24A 5BZ 26.7 28.1 29.5 1.0 24 2.0 50 128.5 38.9 0.087 5KASMC26A 5CE 28.9 30.4 31.9 1.0 26 2.0 50 118.8 42.1 0.088 5KASMC28A 5CG 31.1 32.8 34.4 1.0 28 2.0 50 110.1 45.4 0.089 5KASMC30A 5CK 33.3 35.1 36.8 1.0 30 2.0 50 103.3 48.4 0.090 5KASMC33A 5CM 36.7 38.7 40.6 1.0 33 2.0 50 93.8 53.3 0.091 5KASMC36A 5CP 40.0 42.1 44.2 1.0 36 2.0 50 86.1 58.1 0.091 5KASMC40A 5CR 44.4 46.8 49.1 1.0 40 2.0 50 77.5 64.5 0.092 5KASMC43A 5CT 47.8 50.3 52.8 1.0 43 2.0 50 72.0 69.4 0.093 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient RθJA (1) 100 °C/W Typical thermal resistance, junction to mount RθJM (2) 20.8 °C/W Notes (1) Mounted on minimum recommended pad layout (2) Mounted on infinite heat sink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 5KASMC10AHM3_A/H (1) 0.257 H 850 7" diameter plastic tape and reel 5KASMC10AHM3_A/I (1) 0.257 I 3500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Jan-2024 Document Number: 89432 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5KASMC10A thru 5KASMC43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1 000 000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 000 10 Measured at Zero Bias 10 000 1000 1 Measured at Stand-Off Voltage VWM 100 1 10 100 10 1000 20 30 40 50 td - Pulse Width (µs) Reverse Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance Axis Title 80 1000 60 40 100 Safety Operation Area 20 PD - Power Dissipation (W) 6.0 Typical 1st line Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 6.5 10000 100 5.5 5.0 TM, Mounted on Infinite Heatsink 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 TA, Mounted on Minimum Recommended Pad Layout 0.5 0 0 10 0 25 50 75 0 25 50 100 125 150 175 200 75 100 125 150 175 200 Temperature (°C) TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Peak Value IPPM 100 100 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs tr = 8 µs Transient Thermal Impedance (°C/W) IPPM - Peak Pulse Current (% IRSM) 150 Half Value - IPP IPPM 2 50 td = 1000 µs td = 20 µs td 0 0 1.0 2.0 3.0 Fig. 5 - Power Derating Curve 4.0 10 1 0.01 0.1 1 10 100 1000 t - Time (ms) tp - Pulse Duration (s) Fig. 3 - Pulse Waveform Fig. 6 - Typical Transient Thermal Impedance Revision: 19-Jan-2024 Document Number: 89432 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5KASMC10A thru 5KASMC43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 19-Jan-2024 Document Number: 89432 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024