60EPU06/60APU06
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
60EPU06
FEATURES
60APU06
• Ultrafast recovery
• 175 °C operating junction temperature
• Designed and qualified for industrial level
Cathode
to base
BENEFITS
Cathode
to base
• Reduced RFI and EMI
2
2
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
Cathode
3
Anode
1
Anode
3
Anode
TO-247AC (modified)
DESCRIPTION/APPLICATIONS
TO-247AC
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
trr (typical)
34 ns
IF(AV)
60 A
VR
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VR
MAX.
UNITS
600
V
Continuous forward current
IF(AV)
TC = 116 °C
60
Single pulse forward current
IFSM
TC = 25 °C
600
IFRM
Square wave, 20 kHz
Maximum repetitive forward current
Operating junction and storage temperatures
A
120
TJ, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
Vr
VF
Reverse leakage current
IR
Junction capacitance
CT
Document Number: 93021
Revision: 02-Jun-08
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 60 A
-
1.35
1.68
IR = 100 µA
IF = 60 A, TJ = 125 °C
-
1.20
1.42
IF = 60 A, TJ = 175 °C
-
1.11
1.30
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
VR = 600 V
-
39
-
For technical questions, contact: diodes-tech@vishay.com
UNITS
V
µA
pF
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60EPU06/60APU06
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
Reverse recovery charge
IRRM
Qrr
TYP.
MAX.
UNITS
IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V
-
34
45
TJ = 25 °C
-
81
-
-
164
-
-
7.4
-
-
17.0
-
TJ = 25 °C
-
300
-
TJ = 125 °C
-
1394
-
MIN.
TYP.
MAX.
-
-
0.63
-
0.2
-
-
5.5
-
g
-
0.2
-
oz.
1.2
(10)
-
2.4
(20)
N·m
(lbf · in)
TJ = 125 °C
Peak recovery current
MIN.
TJ = 25 °C
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/µs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
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UNITS
K/W
Case style TO-247AC modified
60EPU06
Case style TO-247AC
60APU06
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93021
Revision: 02-Jun-08
60EPU06/60APU06
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
1000
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
Vishay High Power Products
TJ = 175 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
1
0.001
0
0.5
1.0
2.0
1.5
2.5
0
3.0
100
300
200
500
400
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.7
0.5
0.3
Ri (°C/W)
0.06226
0.32503
0.24271
0.1
0.1
R1
TJ
0.05
R2
τ1
τ2
R3
τ3
TC
Notes:
1. Duty factor D = ton/period
2. Peak TJ = PDM x ZthJC + TC
Ci = τi/Ri
0.01
0.00001
0.0001
0.001
0.01
0.1
τi (s)
0.00049
0.01294
0.24310
1
10
100
ton - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93021
Revision: 02-Jun-08
For technical questions, contact: diodes-tech@vishay.com
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60EPU06/60APU06
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
180
3000
150
2500
2000
Square wave (D = 0.50)
80 % rated VR applied
90
IF = 30 A
IF = 60 A
1500
1000
60
500
30
See note (1)
0
0
0
20
40
60
80
10
100
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Stored Charge vs. dIF/dt
140
300
TJ = 125 °C
TJ = 25 °C
120
250
100
IF = 30 A
IF = 60 A
RMS limit
80
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
60
40
DC
20
trr (ns)
Average Power Loss (W)
TJ = 125 °C
TJ = 25 °C
DC
120
Qrr (nC)
Allowable Case Temperature (°C)
Vishay High Power Products
200
150
100
0
50
0
20
40
60
80
100
10
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93021
Revision: 02-Jun-08
60EPU06/60APU06
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
Vishay High Power Products
VR = 200 V
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93021
Revision: 02-Jun-08
For technical questions, contact: diodes-tech@vishay.com
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60EPU06/60APU06
Ultrafast Soft Recovery Diode,
60 A FRED PtTM
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
60
E
P
U
06
-
1
2
3
4
5
6
1
-
Current rating (60 = 60 A)
2
-
Circuit configuration:
E = Single diode, 2 pins
A = Single diode, 3 pins
3
-
Package:
P = TO-247AC modified
4
-
Type of silicon:
U = Ultrafast recovery
5
-
6
-
Voltage rating (06 = 600 V)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95001
Part marking information
http://www.vishay.com/doc?95006
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93021
Revision: 02-Jun-08
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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