8AF05NPP

8AF Series Vishay Semiconductors Pressfit Rectifier Diodes, 50 A FEATURES • Convenient pressfit package • Available with and without leads • High surge capabilities • Fully characterized bulletin • RoHS compliant • Designed and qualified for industrial level B-47 PRODUCT SUMMARY IF(AV) 50 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES UNITS 50 A TC 150 °C 79 A 50 Hz 714 60 Hz 747 50 Hz 2546 60 Hz 2324 IF(RMS) IFSM I2 t I2t A 25 455 VRRM Range TJ A2 s A2s 50 to 400 V - 65 to 195 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 05 50 75 7 1 100 150 7 2 200 300 5 4 400 500 5 8AF Document Number: 93530 Revision: 17-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 8AF Series Pressfit Rectifier Diodes, 50 A Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current TEST CONDITIONS 180° conduction, half sine wave VALUES UNITS 50 A 150 °C 79 A IF(RMS) t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t 714 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 747 Sinusoidal half wave, initial TJ = TJ maximum 628 2546 2324 1643 t = 0.1 to 10 ms, no voltage reapplied A2s 25 455 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.60 VF(TO)2 ( x IF(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum 0.68 Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 6.66 High level value of forward slope resistance rf2 ( x IF(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum 6.25 TJ = 25 °C, IFM =  x rated IF(AV) 1.45 VFM A2s 1800 100 % VRRM reapplied High level value of threshold voltage Maximum forward voltage drop A 600 V m V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS - 65 to 195 °C 0.60 K/W RthCS As per mounting details, see note (1) Approximate weight Case style VALUES See dimensions - link at the end of datasheet 0.50 10 g 0.36 oz. B-47 Note (1) Mounting: A 12.6 ± 0.02 mm (0.496 to 0.497") diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038 mm (0.015") x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole. www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93530 Revision: 17-Jun-08 8AF Series Pressfit Rectifier Diodes, 50 A Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.042 0.026 120° 0.045 0.043 90° 0.06 0.06 60° 0.10 0.10 30° 0.15 0.15 TEST CONDITIONS UNITS TJ = TJ maximum K/W 200 8AF Series RthJC (DC) = 0.6 K/W 190 180 Conduction Angle 170 160 150 90° 30° 60° 120° 180° 140 0 200 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 8AF Series RthJC (DC) = 0.6 K/W 190 180 Conduction Period 170 160 150 30° 90° 60° 120° 20 30 180° DC 140 5 10 15 20 25 30 35 40 45 50 55 0 10 40 50 60 70 80 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 80 R 180° 120° 90° 60° 30° 70 60 1.5 K/ W 2K /W SA th Maximum Average Forward Power Loss (W) Average Forward Current (A) = 1 K/ W RMS Limit 50 -D el ta R 3K /W 40 5K /W 30 Conduction Angle 10 K/W 20 8AF Series TJ = 195°C 10 15 K/W 0 0 10 20 30 40 50 Average Forward Current (A) 60 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93530 Revision: 17-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 8AF Series Pressfit Rectifier Diodes, 50 A 90 R DC 180° 120° 90° 60° 30° 80 70 60 SA th Maximum Average Forward Power Loss (W) Vishay Semiconductors 1.5 K/ W 2K /W = 1K /W -D elt a R RMS Limit 50 3K /W 40 5K /W 30 Conduction Period 10 K/W 20 8AF Series TJ = 195°C 10 15 K/W 0 0 10 20 30 40 50 60 Average Forward Current (A) 70 80 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics 650 600 550 500 450 400 350 300 250 8AF Series 200 1 100 10 TJ = 25°C TJ = 195°C 10 0 100 1 2 3 4 5 6 7 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics 750 Peak Half Sine Wave Forward Current (A) 8AF Series 1 150 700 650 600 550 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 195 °C No Voltage Reapplied Rated VRRM Reapplied 500 450 400 350 300 250 200 150 0.01 8AF Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 Transient Thermal Impedance Z thJC (K/W) Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 195°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Instantaneous Forward Current (A) 1000 700 1 Steady State Value (DC Operation) 0.1 8AF Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93530 Revision: 17-Jun-08 8AF Series Pressfit Rectifier Diodes, 50 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code 8AF 4 N LV 1 2 3 4 1 - Essential part number 2 - Voltage code x 100 = VRRM (see Voltage Ratings table) 3 - N = Normal polarity (cathode to case) R = Reverse polarity (anode to case) 4 - PP = Without lead LH = Horizontal lead LV = Vertical lead LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93530 Revision: 17-Jun-08 http://www.vishay.com/doc?95330 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors B-47 DIMENSIONS in millimeters (inches) 15.8 (0.62) 12.5 (0.49) 0.9 (0.03) 7 (0.28) R 0.4 (0.02) 2.4 (0.09) 16.5 (0.65) 5 (0.20) 22.5 (0.89) 0.5 (0.02) 6 (0.24) Ø 12.77/13.27 (Ø 0.50/0.52) Document Number: 95330 Revision: 04-Jul-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000