VS-8EWX06FN-M3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time, extremely low Qrr
2, 4
• 175 °C maximum operating junction temperature
• For PFC CCM operation
• Low forward voltage drop
1
N/C
• Low leakage current
3
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DPAK (TO-252AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV)
8A
VR
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
VF at IF
1.4 V
trr (typ.)
15 ns
TJ max.
175 °C
Package
DPAK (TO-252AA)
Circuit configuration
Single
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 140 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
90
Peak repetitive forward current
IFM
TC = 140 °C, f = 20 kHz, d = 50 %
16
Operating junction and storage temperatures
TJ, TStg
8
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 8 A
-
2.3
3.0
IF = 8 A, TJ = 150 °C
-
1.4
1.7
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
500
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
7
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 05-Jun-2023
Document Number: 93244
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
15
19
TJ = 25 °C
-
17
-
TJ = 125 °C
-
40
-
TJ = 25 °C
IRRM
TJ = 125 °C
-
2.5
-
-
4.5
-
ns
A
-
22
-
-
70
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJC
-
1.8
2.2
°C/W
Reverse recovery charge
TJ = 25 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 390 V
UNITS
Qrr
TJ = 125 °C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
TEST CONDITIONS
Approximate weight
g
oz.
Case style DPAK (TO-252AA)
8EWX06FN
1000
100
TJ = 175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
0.3
0.01
10
1
TJ = 150 °C
TJ = 25 °C
0.1
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
0.0
1.0
2.0
3.0
4.0
5.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
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CT - Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
0.1
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
25
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
150
DC
140
Square wave (D = 0.50)
rated VR applied
130
120
RMS Limit
20
15
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10
5
DC
see note (1)
110
0
0
2
4
6
8
10
12
14
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
2
4
6
8
10
12
14
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 05-Jun-2023
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300
50
45
250
8 A, TJ = 125 °C
40
200
Qrr (nC)
trr (nC)
35
30
25
8 A, TJ = 125 °C
150
100
8 A, TJ = 25 °C
8 A, TJ = 25 °C
20
50
15
10
0
100
100
1000
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 05-Jun-2023
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ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
X
06
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = single diode
4
-
Package identifier:
5
-
X = hyperfast recovery time
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = tube
W = D-PAK
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-8EWX06FN-M3
BASE QUANTITY
PACKAGING DESCRIPTION
75
Antistatic plastic tube
VS-8EWX06FNTR-M3
2000
13" diameter reel
VS-8EWX06FNTRL-M3
3000
13" diameter reel
VS-8EWX06FNTRR-M3
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95374
Revision: 05-Jun-2023
Document Number: 93244
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Outline Dimensions
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D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
A
E
b3
(3)
Pad layout
C
A
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
3
2
0.488 (12.40)
0.409 (10.40)
1
0.089
MIN.
(2.28)
Detail “C”
(2) L5
b
2x e
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
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