VS-90-110MT.KPbF Series
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Vishay Semiconductors
Three Phase Bridge
(Power Modules), 90 A/110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio, outline for easy connections
to power transistor and IGBT modules
• 4000 VRMS isolating voltage
• UL E78996 approved
MTK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IO
90 A to 110 A
VRRM
800 V to 1600 V
Package
MTK
Circuit configuration
Three phase bridge
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
CHARACTERISTICS
TC
VRRM
TJ
VALUES
110MT.K
90 (120)
110 (150)
A
90 (61)
90 (57)
°C
50 Hz
770
950
60 Hz
810
1000
50 Hz
3000
4500
60 Hz
2700
4100
30 000
45 000
I2t
TStg
VALUES
90MT.K
Range
800 to 1600
A
A2s
A2s
V
-40 to 150
Range
UNITS
°C
-40 to 150
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-90MT..K
VS-110MT..K
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
80
800
900
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
IRRM MAXIMUM
AT TJ = MAXIMUM
mA
10
Revision: 17-Aug-17
Document Number: 94352
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VS-90-110MT.KPbF Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current at case
temperature
IO
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Initial
TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
90MT.K
VALUES
110MT.K
90 (120)
110 (150)
A
90 (61)
90 (57)
°C
770
950
810
1000
650
800
680
840
3000
4500
2700
4100
2100
3200
1900
2900
30 000
45 000
Low level value of
threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
0.89
0.81
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ maximum
1.05
0.99
5.11
4.37
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ maximum
Maximum forward voltage drop
VFM
Ipk = 150 A, TJ = 25 °C
tp = 400 μs single junction
RMS isolation voltage
VISOL
TJ = 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
UNITS
A
A2s
A2s
V
m
4.64
1.6
1.4
V
4000
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
to heatsink
to terminal
TEST CONDITIONS
VALUES
90MT.K
TJ, TStg
RthJC
RthCS
VALUES
110MT.K
-40 to 150
DC operation per module
0.21
0.18
DC operation per junction
1.26
1.07
120° rect. conduction angle per module
0.25
0.21
120° rect. conduction angle per junction
1.47
1.25
Mounting surface smooth, flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
Lubricated threads.
UNITS
°C
°C/W
0.03
4 to 6
3 to 4
176
Nm
g
Revision: 17-Aug-17
Document Number: 94352
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
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Vishay Semiconductors
90MT..K Series
140
Maximum Allowable Case
Temperature (°C)
Instantaneous Forward Current (A)
150
130
120
120°
(Rect)
110
100
90
+
80
~
70
-
60
50
0
25
50
75
100
100
TJ = 25 °C
TJ = 150 °C
10
90MT..K Series
Per junction
1
0
125
1
2
3
4
5
Total Output Current (A)
Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
400
400
350
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
1000
90MT..K Series
TJ = 150 °C
300
250
120°
(Rect.)
200
150
100
50
0
R
0.
12
350
0.2
300
0.3
250
th
K/
W
0.
05
K/
W
K/W
100
50
1.5 K/W
150
=
W
0.0
5K
/W
0.7
K/W
1.0 K
/W
200
SA
K/
-Δ
R
0
0
20
40
60
80
100
120
0
25
Total Output Current (A)
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
700
600
550
750
700
Peal Half Sine Wave
Forward Current (A)
650
Peak Half Sine Wave
Forward Current (A)
800
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
450
400
350
300
650
600
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
500
450
400
350
300
250
90MT..K Series
250
200
200
1
10
100
150
0.01
90MT..K Series
0.1
1.0
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
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VS-90-110MT.KPbF Series
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Instantaneous Forward Current (A)
150
Vishay Semiconductors
110MT..K Series
Maximum Allowable Case
Temperature (°C)
140
130
120
120°
(Rect.)
110
100
90
80
+
70
~
60
-
50
0
20
40
60
80
100
120
140
100
TJ = 25 °C
TJ = 150 °C
10
110MT..K Series
Per junction
1
0
160
1
2
3
4
5
Total Output Current (A)
Instantaneous Forward Voltage (V)
Fig. 6 - Current Ratings Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
450
Maximum Total Power Loss (W)
450
Maximum Total Power Loss (W)
1000
110MT..K Series
TJ = 150 °C
400
350
300
120°
(Rect.)
250
200
150
100
50
400
0.
12
350
0.2
300
0.3
250
0.4
200
0.5
R
th
K/
W
SA
=
0.
05
K/W
K/
W
K/W
-Δ
R
K/W
K/W
0.7
K/W
1.0 K
/W
150
100
1.5 K
50
/W
0
0
0
25
50
75
100
125
0
150
25
50
75
100
125
150
Maximum Allowable Ambient
Temperature (°C)
Total Output Current (A)
Fig. 8 - Total Power Loss Characteristics
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
800
700
600
500
400
300
110MT..K Series
900
800
10
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
700
600
500
400
300
200
1
1000
Peak Half Sine Wave
Forward Current (A)
900
200
0.01
110MT..K Series
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
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Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
RthJC = 1.26 K/W
RthJC = 1.07 K/W
(DC operation)
90MT..K Series
1
110MT..K Series
0.1
Per junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
VS-
11
0
1
2
3
MT 160
4
K
PbF
5
6
1
-
Vishay Semiconductors product
2
-
Current rating code: 9 = 90 A (average)
11 = 110 A (average)
3
-
Three phase diodes bridge
4
5
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
+ D
A
B
~
C
-
E
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 17-Aug-17
Document Number: 94352
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: indmodules@vishay.com
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Outline Dimensions
MTK (with and without optional barrier)
Vishay Semiconductors
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
24 ± 0.5
(0.94 ± 0.02)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
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Document Number: 95004
Revision: 27-Aug-07
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Document Number: 91000
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Revision: 01-Jan-2024