AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
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Vishay General Semiconductor
Surface Mount Fast Avalanche Rectifiers
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• Low reverse current
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMP (DO-220AA)
Cathode
• AEC-Q101 qualified
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
3D Models
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
1.0 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
30 A, 25 A
trr
140 ns, 120 ns
VF
1.15 V, 1.4 V
IR
1 μA
EAS
20 mJ
TJ max.
175 °C
Package
SMP (DO-220AA)
Circuit configuration
Single
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
AR1PD
AR1PG
AR1PJ
AR1PK
AR1PM
ARD
ARG
ARJ
ARK
ARM
200
400
600
800
1000
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy
at IAS = 1.0 A, TA = 25 °C
EAS
20
mJ
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
1.0
30
V
A
25
A
Revision: 21-Feb-2020
Document Number: 89289
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
AR1PD
AR1PG
AR1PJ
AR1PK
AR1PM
1.25
1.6
1.15
1.4
UNIT
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
140
120
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
12.5
8.5
pF
VF (1)
TA = 125 °C
TA = 25 °C
1.0
IR (2)
TA = 125 °C
V
μA
100
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
RθJA
Typical thermal resistance
AR1PD
AR1PG
AR1PJ
(1)
AR1PK
AR1PM
132
RθJM (1)
UNIT
°C/W
15
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
θJA - junction to ambient, RθJM - junction to mount at the terminal
cathode band
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AR1PJ-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
AR1PJ-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
AR1PJHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
AR1PJHM3/85A
Note
Automotive grade
(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
Resistive or inductive load
AR1PD thru AR1PJ
AR1PD thru AR1PJ
1.0
0.8
AR1PK thru AR1PM
0.6
0.4
0.2
D = 0.5
D = 0.2
0.8
D = 1.0
D = 0.1
0.6
T
0.4
0.2
TM measured
at mount of terminal
0
100
D = 0.8
D = 0.3
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
D = tp/T
tp
0.8
1.0
0
110
120
130
140
150
160
170
180
0
0.2
0.4
0.6
1.2
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 21-Feb-2020
Document Number: 89289
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
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Vishay General Semiconductor
Axis Title
1.4
D = 0.2
D = 1.0
D = 0.1
0.8
0.6
T
0.4
0.2
D = tp/T
tp
0.8
1.0
0
0.2
0
0.4
0.6
100
TJ = 125 °C
1000
10
TJ = 75 °C
1
TJ = 25 °C
100
0.1
0.01
TJ = -40 °C
AR1PD thru ARPJ
0.001
1.2
10
Average Forward Current (A)
20
30
40
Tj = 25 °C
100
Tj = 75 °C
AR1PD thru AR1PJ
10
0.01
0.5
0.7
0.9
1.1
1.3
1.5
1.7
2nd line
Instantaneous Reverse Current (µA)
1000
Tj = -40 °C
1st line
2nd line
Instantaneous Forward Current (A)
1000
Tj = 175 °C
0.3
80
90
10
100
Axis Title
10000
0.1
70
Fig. 6 - Typical Reverse Characteristics
Axis Title
10
Tj = 125 °C
60
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
1
50
10000
TJ = 175 °C
100
TJ = 125 °C
1000
10
TJ = 75 °C
1st line
1.0
10000
TJ = 175 °C
1st line
D = 0.3
1.2
Average Power Loss (W)
D = 0.5
1000
D = 0.8
2nd line
Instantaneous Reverse Current (μA)
AR1PK thru AR1PM
1
TJ = 25 °C
0.1
0.01
TJ = -40 °C
AR1PK thru AR1PM
0.001
1.9
100
10
Instantaneous Forward Voltage (V)
20
30
40
50
60
70
80
90
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Characteristics
Axis Title
1
1000
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
100
0.1
Tj = 75 °C
AR1PK thru AR1PM
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Junction Capacitance (pF)
Tj = 175 °C
1st line
2nd line
Instantaneous Forward Current (A)
100
10000
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
AR1PD thru AR1PJ
AR1PK thru AR1PM
10
1.9
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
Revision: 21-Feb-2020
Document Number: 89289
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
Junction to ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 21-Feb-2020
Document Number: 89289
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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