AS1FD-M3/H

AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM www.vishay.com Vishay General Semiconductor Standard Avalanche Surface-Mount Rectifiers FEATURES eSMP® Series • Low profile package Available • Glass passivated pellet chip junction • Ideal for automated placement • Low forward voltage drop, low reverse current Top view • Meets MSL level 1, per LF maximum peak of 260 °C Bottom view • Wave and reflow solderable SMF (DO-219AB) Cathode J-STD-020; • AEC-Q101 qualified - Automotive ordering code: base P/NHM3 Anode • Compatible to SOD-123W package case outline LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A IR 0.2 μA VF at IF = 1 A 0.84 V EAS 20 mJ TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code AS1FD AS1FG AS1FJ AS1FK AS1FM ASD ASG ASJ ASK ASM 200 400 600 800 1000 UNIT Max. repetitive peak reverse voltage VRRM Max. DC forward current (see fig. 1) IF (1) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V Note (1) Free air, mounted on recommended PCB, 2 oz. pad area Revision: 30-Sep-2020 Document Number: 87021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TJ = 25 °C IF = 1.0 A TJ = 125 °C Instantaneous forward voltage MAX. 0.95 - 0.84 - 0.99 1.15 TJ = 125 °C 0.89 1.0 TJ = 25 °C 0.14 5 25 100 TJ = 25 °C IF = 1.5 A TYP. VF (1) IR (2) UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.3 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 8.8 - pF AS1FK AS1FM UNIT TJ = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance AS1FD AS1FG AS1FJ RJA (1)(2) 130 RJM (1) 20 °C/W Notes (1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R JA - junction to ambient; RJM - junction to mount (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA ORDERING INFORMATION (Example) PREFERRED P/N AS1FM-M3/H AS1FM-M3/I AS1FMHM3/H (1) AS1FMHM3/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.015 H 3000 7" diameter plastic tape and reel 0.015 I 10 000 13" diameter plastic tape and reel 0.015 H 3000 7" diameter plastic tape and reel 0.015 I 10 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 30-Sep-2020 Document Number: 87021 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Axis Title Axis Title 10000 1.2 1000 1 0.8 0.6 100 RthJA = 130 °C/W 0.4 0.2 TM measured at cathode terminal mount typical values 10 0 0 25 50 75 100 125 150 TJ = 175 °C 100 TJ = 125 °C 1000 10 1st line 2nd line RthJM = 20 °C/W 2nd line Instantaneous Reverse Current (µA) 1.4 10000 1000 1st line 2nd line 2nd line Average Forward Rectified Current (A) 1.6 TJ = 100 °C 1 TJ = 25 °C 0.1 100 TJ = -40 °C 0.01 10 0.001 10 175 20 30 40 50 60 80 90 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Axis Title Axis Title 10000 1.8 100 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.3 1.2 1000 D = 0.2 1.0 1st line 2nd line D = 1.0 D = 0.1 0.8 D = 0.8 100 0.6 D = 0.5 T 0.4 1000 1st line 2nd line 1.4 2nd line Junction Capacitance (pF) 1.6 2nd line Average Power Loss (W) 70 10 100 0.2 D = tp/T tp 10 0 0 10 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 1000 1st line 2nd line 1 TJ = 100 °C 100 TJ = 25 °C TJ = -40 ƱC 10 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C TJ = 125 °C 10000 1000 10000 Junction to ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) 10 1 0.01 0.1 1 10 100 10 1000 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 30-Sep-2020 Document Number: 87021 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.1(0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.: S8-V-3915.01-001 (4) 17247 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) Revision: 30-Sep-2020 Document Number: 87021 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000