AS4PDHM3/87A

AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM www.vishay.com Vishay General Semiconductor High Current Density Standard Avalanche Surface-Mount Rectifiers FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Glass passivated pellet chip junction • Controlled avalanche characteristics 1 • Low leakage current 2 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMPC (TO-277A) K Anode 1 Cathode Anode 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 4.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A Molding compound meets UL 94 V-0 flammability rating EAS 20 mJ VF at IF = 4 A 0.92 V Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Max. repetitive peak reverse voltage VRRM Max. DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C IAS = 2.5 A max. IAS = 1.0 A typical Operating junction and storage temperature range AS4PD AS4PG AS4PJ AS4PK AS4PM AS4D AS4G AS4J AS4K AS4M 200 400 600 800 1000 IF (1) 4.0 IF (2) 2.4 IFSM 100 EAS TJ, TSTG 20 30 -55 to +175 UNIT V A A mJ °C Notes (1) Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 23-Nov-2020 Document Number: 88770 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A IF = 4.0 A Instantaneous forward voltage IF = 2.0 A IF = 4.0 A SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TYP. MAX. 0.962 - 1.044 1.10 0.822 - 0.922 0.98 IR (2) 0.35 10 75 150 UNIT V Reverse current rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 - μs Typical junction capacitance per diode 4.0 V, 1 MHz CJ 60 - pF AS4PM UNIT TA = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance AS4PD AS4PG AS4PJ RθJA (1) 80 RθJM (2) 5 AS4PK °C/W Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R θJA - junction to ambient (2) Units mounted on PCB with 20 mm x 20 mm copper pad areas, 1 oz. FR4 PCB; R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N AS4PJ-M3/86A AS4PJ-M3/87A AS4PJHM3_A/H (1) AS4PJHM3_A/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel 0.10 87A 6500 13" diameter plastic tape and reel 0.10 H 1500 7" diameter plastic tape and reel 0.10 I 6500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 23-Nov-2020 Document Number: 88770 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 10000 1000 2nd line Instantaneous Reverse Current (µA) TM = 155 °C DC Forward Current (A) 4.0 3.5 3.0 TA = 25 °C 2.5 2.0 1.5 1.0 TM Measured at the Cathode Band Terminal 0.5 TJ = 175 °C 100 TJ = 125 °C 10 1000 TJ = 75 °C 1 0.1 TJ = 25°C 0 TJ = -40°C 0.001 25 50 75 100 125 150 10 10 175 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Mount Temperature (°C) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 1000 5.0 D = 0.8 D = 0.5 D = 0.3 4.5 D = 0.2 4.0 Junction Capacitance (pF) Average Power Loss (W) 100 0.01 0.0001 0 3.5 D = 0.1 3.0 D = 1.0 2.5 2.0 T 1.5 1.0 D = tp/T 0.5 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 tp 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 4.5 1 Fig. 2 - Forward Power Loss Characteristics TJ = 175 °C 1st line 2nd line 1000 TJ = 125 °C TJ = 75 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0.5 0.7 0.9 1.1 1.3 1.5 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 100 10000 0.3 100 Fig. 5 - Typical Junction Capacitance Axis Title 100 10 10 Reverse Voltage (V) Average Forward Current (A) 2nd line Instantaneous Forward Current (A) 1st line 2nd line 4.5 Junction-to-Ambient 10 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 23-Nov-2020 Document Number: 88770 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 23-Nov-2020 Document Number: 88770 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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