AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
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Vishay General Semiconductor
Surface Mount Ultrafast Avalanche Rectifiers
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMP (DO-220AA)
Cathode
J-STD-020,
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
30 A, 25 A
trr
75 ns
IR
1 μA
EAS
20 mJ
VF at IF = 1.0 A
1.6 V
TJ max.
175 °C
Package
SMP (DO-220AA)
Circuit configuration
Single
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
VRRM
AU1PD
AU1PG
AU1PJ
AU1PK
AU1PM
AUD
AUG
AUJ
AUK
AUM
200
400
600
800
1000
UNIT
V
Average forward current
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C
EAS
20
mJ
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
1.0
30
A
25
A
Revision: 08-Mar-2022
Document Number: 89291
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
AU1PD
AU1PG
VF (1)
TA = 125 °C
TA = 25 °C
AU1PK
AU1PM
1.5
1.85
1.4
1.6
1.0
IR (2)
TA = 125 °C
AU1PJ
UNIT
V
μA
100
75
ns
11
7.5
pF
Notes
(1) Pulse test:300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
RθJA
Typical thermal resistance
AU1PD
AU1PG
(1)
AU1PJ
AU1PK
AU1PM
132
RθJM (1)
UNIT
°C/W
15
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
θJA - junction to ambient, RθJM - junction to mount at the terminal
cathode band
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AU1PJ-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
AU1PJ-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/85A
Note
AEC-Q101 qualified
(1)
Revision: 08-Mar-2022
Document Number: 89291
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °c unless otherwise noted)
Axis Title
10
Resistive or Inductive Load
AU1PD thru AU1PJ
2nd line
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
1.2
1.0
0.8
AU1PK thru AU1PM
0.6
0.4
TM Measured
at the Cathode Band Terminal
0.2
0
100
110
120
130
140
150
170
160
10000
TJ = 175 °C
TJ = 125 °C
1000
TJ = 75 °C
1
TJ = 25 °C
100
TJ = -40 °C
AU1PD thru AU1PJ
0.1
10
0.4
180
0.8
1.2
1.6
2.0
2.4
2.8
Instantaneous Forward Voltage (V)
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Instantaneous Forward Characteristics
Axis Title
D = 0.3
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
TJ = 175 °C
100
TJ = 125 °C
1000
10
1st line
2nd line
line
2nd
1.4
D = 0.8
D = 0.5
2nd line
Instantaneous Reverse Current (µA)
AU1PD thru AU1PJ
Average Power Loss (W)
10000
1000
1.6
TJ = 75 °C
1
TJ = 25 °C
100
0.1
TJ = -40 °C
0.01
AU1PD thru AU1PJ
10
0.001
0
0
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Axis Title
1.6
Average Power Loss (W)
D = 0.5
D = 0.3
D = 0.8
2nd line
Instantaneous Forward Current (A)
AU1PK thru AU1PM
1.4
10
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
10000
TJ = 175 °C
TJ = 125 °C
1
1000
TJ = 75 °C
0.1
TJ = 25 °C
100
TJ = -40 °C
AU1PK thru AU1PM
0.01
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Reverse Characteristics
Revision: 08-Mar-2022
Document Number: 89291
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
10000
1000
Transient Thermal Impedance (°C/W)
TJ = 175 °C
100
TJ = 125 °C
1000
10
1st line
2nd line
2nd line
Instantaneous Reverse Current (µA)
1000
TJ = 75 °C
1
0.1
100
TJ = 25 °C
0.01
TJ = -40 °C
AU1PK thru AU1PM
0.001
10
20
30
40
50
60
70
80
10
Junction to Ambient
100
10
1
0.01
90 100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 7 - Typical Reverse Characteristics
Fig. 9 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
AU1PD thru AU1PJ
AU1PK thru AU1PM
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
Mounting pad layout
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 08-Mar-2022
Document Number: 89291
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000