AU1PDHM3/84A

AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Avalanche Rectifiers FEATURES • Very low profile - typical height of 1.0 mm ® eSMP Series Available • Ideal for automated placement • Glass passivated chip junction • Ultrafast recoveray times for high frequency • Low reverse current • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • AEC-Q101 qualified DO-220AA (SMP) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A, 25 A trr 75 ns IR 1 μA EAS 20 mJ VF at IF = 1.0 A 1.6 V TJ max. 175 °C Package DO-220AA (SMP) Diode variations Single die  MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test  TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds of AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage VRRM AU1PD AU1PG AU1PJ AU1PK AU1PM AUD AUG AUJ AUK AUM 200 400 600 800 1000 1.0 UNIT V A Average forward current IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Revision: 29-Aug-13 30 25 A Document Number: 89291 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Maximum instantaneous forward voltage IF = 1.0 A Maximum reverse current Rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ AU1PD AU1PG VF (1) TA = 125 °C TA = 25 °C AU1PJ AU1PM 1.85 1.4 1.6 UNIT V 1.0 IR (2) TA = 125 °C AU1PK 1.5 μA 100 75 ns 11 7.5 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance AU1PD AU1PG AU1PJ RJA (1) 132 RJM (1) 15 AU1PK AU1PM UNIT °C/W Note Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount at the terminal cathode band (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE AU1PJ-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel AU1PJ-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel AU1PJHM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel (1) 0.024 85A 10 000 13" diameter plastic tape and reel AU1PJHM3/85A BASE QUANTITY DELIVERY MODE Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.6 Resistive or Inductive Load AU1PD thru AU1PJ AU1PD thru AU1PJ 1.4 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 0.8 AU1PK thru AU1PM 0.6 0.4 0.2 0 100 TM Measured at the Cathode Band Terminal D = 0.5 D = 0.8 D = 0.3 D = 0.2 1.2 D = 1.0 D = 0.1 1.0 0.8 0.6 T 0.4 0.2 D = tp/T tp 0.8 1.0 0 110 120 130 140 150 160 170 180 0 0.2 0.4 0.6 1.2 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 29-Aug-13 Document Number: 89291 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor 1000 1.6 Average Power Loss (W) 1.4 D = 0.5 D = 0.3 D = 0.8 Instantaneous Reverse Current (μA) AU1PK thru AU1PM D = 0.2 1.2 D = 1.0 D = 0.1 1.0 0.8 0.6 T 0.4 0.2 D = tp/T tp TA = 125 °C 10 TA = 75 °C 1 TA = 25 °C 0.1 AU1PD thru AU1PJ 0.01 0 0.2 0 0.4 0.8 0.6 1.0 1.2 10 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Reverse Characteristics 100 Instantaneous Reverse Current (μA) 1000 TA = 175 °C TA = 125 °C 1 TA = 75 °C TA = 25 °C AU1PD thru AU1PJ 0.1 0.4 0.8 1.2 1.6 2.0 2.4 TA = 175 °C 100 TA = 125 °C 10 TA = 75 °C 1 0.1 TA = 25 °C AU1PK thru AU1PM 0.01 2.8 10 20 30 40 50 60 70 Fig. 4 - Typical Instantaneous Forward Characteristics 90 100 Fig. 7 - Typical Reverse Characteristics 100 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 125 °C TA = 75 °C 0.1 TA = 25 °C Junction Capacitance (pF) TA = 175 °C 1 80 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 20 Average Forward Current (A) 10 Instantaneous Forward Current (A) TA = 175 °C 100 10 AU1PD thru AU1PJ AU1PK thru AU1PM AU1PK thru AU1PM 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 1 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance Revision: 29-Aug-13 100 Document Number: 89291 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor    Transient Thermal Impedance (°C/W) 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) Revision: 29-Aug-13 0.025 0.030 (0.635) (0.762) 0.100 (2.54) 0.050 (1.27) Document Number: 89291 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000