AZ23B16-E3-18

AZ23-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for 2 % tolerance. 3 20456 DESIGN SUPPORT TOOLS Available • The parameters are valid for both diodes in one case. VZ and Rzj of the two diodes in one case is  5 % click logo to get started • AEC-Q101 qualified available • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Models Available PRIMARY CHARACTERISTICS • Base P/N-E3 - RoHS-compliant, commercial grade PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5 mA VZ specification Circuit configuration • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Pulse current Dual common anode ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000 10 000 (8 mm tape on 13" reel) 10 000 AZ23C2V7-E3-08 to AZ23C51-E3-08 AZ23B2V7-E3-08 to AZ23B51-E3-08 AZ23C2V7-HE3-08 to AZ23C51-HE3-08 AZ23-series AZ23B2V7-HE3-08 to AZ23B51-HE3-08 AZ23C2V7-E3-18 to AZ23C51-E3-18 AZ23B2V7-E3-18 to AZ23B51-E3-18 AZ23C2V7-HE3-18 to AZ23C51-HE3-18 AZ23B2V7-HE3-18 to AZ23B51-HE3-18 PACKAGE PACKAGE NAME SOT-23 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Thermal resistance, junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Junction temperature Rev. 2.0. 27-Feb-18 Document Number: 85759 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA MIN. NOM. MAX. REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT V  nA 10-4/°C MIN. MAX. AZ23C2V7 D1 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 -4 AZ23C3V0 D2 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 AZ23C3V3 D3 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V6 D4 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V9 D5 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 AZ23C4V3 D6 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 AZ23C4V7 D7 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 AZ23C5V1 D8 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23C5V6 D9 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 6 AZ23C6V2 D10 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 7 AZ23C6V8 D11 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23C7V5 D12 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 3 7 AZ23C8V2 D13 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23C9V1 D14 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 5 8 AZ23C10 D15 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 AZ23C11 D16 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23C12 D17 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 6 9 AZ23C13 D18 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23C15 D19 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23C16 D20 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 AZ23C18 D21 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 AZ23C20 D22 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23C22 D23 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23C24 D24 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23C27 D25 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23C30 D26 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23C33 D27 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23C36 D28 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23C39 D29 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23C43 D30 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23C47 D31 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 AZ23C51 D32 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 2.0. 27-Feb-18 Document Number: 85759 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 VZ at IZT  10-4/°C V nA MIN. NOM. MAX. MIN. MAX. AZ23B2V7 D1 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 -4 AZ23B3V0 D2 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 -3 AZ23B3V3 D3 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V6 D4 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V9 D5 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 -3 AZ23B4V3 D6 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 -1 AZ23B4V7 D7 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 2 AZ23B5V1 D8 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23B5V6 D9 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 6 AZ23B6V2 D10 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 7 AZ23B6V8 D11 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23B7V5 D12 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 3 7 AZ23B8V2 D13 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23B9V1 D14 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 5 8 AZ23B10 D15 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 AZ23B11 D16 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23B12 D17 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 6 9 AZ23B13 D18 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23B15 D19 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23B16 D20 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 8 9.5 AZ23B18 D21 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 8 9.5 AZ23B20 D22 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23B22 D23 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23B24 D24 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23B27 D25 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23B30 D26 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23B33 D27 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23B36 D28 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23B39 D29 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23B43 D30 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23B47 D31 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 10 12 AZ23B51 D32 50 51 52 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 2.0. 27-Feb-18 Document Number: 85759 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) IF mA 103 Ω 103 102 5 4 3 2 10 Rzth TJ = 100 °C 1 Rzth = RthA x VZ x Δ VZ ΔTj 102 10-1 5 4 3 TJ = 25 °C 2 10-2 10 10-3 5 4 3 10-4 negative 2 10-5 0 positive 1 0.2 0.4 0.6 0.8 1V 1 VF 18114 2 3 4 5 10 18121 Fig. 1 - Forward Characteristics 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 4 - Thermal Differential Resistance vs. Zener Voltage Ω 100 mW 500 7 5 4 400 Rzj Ptot 3 2 300 10 7 200 5 4 3 100 2 0 0 100 1 200 °C 4 5 10 2 3 4 5 100 V VZ mV/°C 25 Ω 103 Tj = 25 °C 7 5 4 2 3 Fig. 5 - Dynamic Resistance vs. Zener Voltage Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 2 18122 Tamb 18115 Rzj Tj = 25 °C IZ = 5 mA 1 Δ VZ ΔTj 47 + 51 43 39 36 20 5 mA IZ = 1 mA 20 mA 15 10 102 7 5 5 4 3 0 2 10 0.1 18120 -5 2 3 4 5 1 2 IZ 3 4 5 10 mA Fig. 3 - Dynamic Resistance vs. Zener Current 1 18123 2 3 4 5 10 2 3 4 5 100 V VZ Fig. 6 - Temperature Dependence of Zener Voltage vs. Zener Voltage Rev. 2.0. 27-Feb-18 Document Number: 85759 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com Vishay Semiconductors V 0.8 V 1.6 25 0.7 15 VZ at IZ = 5 mA 0.6 Δ VZ 1.2 Δ VZ 0.5 8 0.4 0.2 6.2 5.9 0.1 5.6 0 1 0.8 7 0.3 0.6 0.4 0.2 0 5.1 -1 0 20 40 60 80 100 120 140 C 18124 - 0.2 4.7 3.6 - 0.2 ΔVZ = Rzth x IZ 1.4 10 - 0.4 18127 1 10 4 5 2 100 V 3 4 5 Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mV/°C 100 V 5 ΔVZ = Rzth x IZ IZ = 5 mA 4 80 Δ VZ 60 3 40 2 20 1 0 IZ = 5 mA IZ = 2 mA 0 0 20 40 60 80 0 100 V VZ 18125 20 40 mA 50 Tj = 25 °C 8 7 6.8 3.3 4.7 40 5 3.9 5.6 2.7 lZ 51 43 100 V 80 Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage V 9 6 60 VZ 18128 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Δ VZ 3 VZ at IZ = 5 mA Fig. 7 - Change of Zener Voltage vs. Junction Temperature Δ VZ ΔTj 2 Tj 8.2 30 4 36 3 20 2 1 Test current IZ 5 mA 10 0 IZ = 2 mA -1 0 18126 20 40 60 80 100 120 Tj 140 °C Fig. 9 - Change of Zener Voltage vs. Junction Temperature 0 0 18111 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 12 - Breakdown Characteristics Rev. 2.0. 27-Feb-18 Document Number: 85759 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com mA 30 Vishay Semiconductors mA 10 10 12 Tj = 25 °C Tj = 25 °C 8 lZ lZ 15 20 18 Test current IZ 5 mA 6 39 51 43 47 22 4 27 Test 10 current IZ 5 mA 33 36 2 0 0 0 10 20 18112 40 V 30 0 VZ 10 20 30 40 50 60 70 80 90 100 V VZ 18113 Fig. 13 - Breakdown Characteristics Fig. 14 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 2.0. 27-Feb-18 Document Number: 85759 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 2.0. 27-Feb-18 Document Number: 85759 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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