AZ23C51-G3-08

AZ23-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 3 20456 • The parameters are valid for both diodes in one case. ΔVZ and ΔRzj of the two diodes in one case is ≤ 5 % ADDITIONAL RESOURCES 3D 3D • AEC-Q101 qualified available (part number on request) 3D Models • ESD capability according to AEC-Q101: human body model > 8 kV machine model > 800 V PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5 mA VZ specification Pulse current Circuit configuration • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for 2 % tolerance Common anode • Base P/N-G3 - green, commercial grade • Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000 10 000 (8 mm tape on 13" reel) 10 000 AZ23C2V7-G3-08 to AZ23C51-G3-08 AZ23-G-series AZ23B2V7-G3-08 to AZ23B51-G3-08 AZ23C2V7-G3-18 to AZ23C51-G3-18 AZ23B2V7-G3-18 to AZ23B51-G3-18 PACKAGE PACKAGE NAME SOT-23 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Thermal resistance, junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Junction temperature Storage temperature range Zener current Operating temperature range Tj 150 °C Tstg -65 to +150 °C IZ Ptot/VZ mA Top -55 to +150 °C Rev. 1.7, 11-Dec-2019 Document Number: 85867 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA MIN. NOM. MAX. REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 α VZ at IZT V Ω nA 10-4/°C MIN. MAX. AZ23C2V7-G D41 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 -4 AZ23C3V0-G D42 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 AZ23C3V3-G D43 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V6-G D44 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V9-G D45 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 AZ23C4V3-G D46 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 AZ23C4V7-G D47 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 AZ23C5V1-G D48 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23C5V6-G D49 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 6 AZ23C6V2-G D50 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 7 AZ23C6V8-G D51 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23C7V5-G D52 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 3 7 AZ23C8V2-G D53 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23C9V1-G D54 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 5 8 AZ23C10-G D55 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 AZ23C11-G D56 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23C12-G D57 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 6 9 AZ23C13-G D58 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23C15-G D59 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23C16-G D60 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 AZ23C18-G D61 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 AZ23C20-G D62 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23C22-G D63 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23C24-G D64 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23C27-G D65 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23C30-G D66 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23C33-G D67 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23C36-G D68 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23C39-G D69 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23C43-G D70 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23C47-G D71 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 48 51 50 5 1 > 38 100 70 (< 100) < 750 10 12 AZ23C51-G D72 Note (1) Tested with pulses t = 5 ms p Rev. 1.7, 11-Dec-2019 Document Number: 85867 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 αVZ at IZT Ω 10-4/°C V nA MIN. NOM. MAX. MIN. MAX. AZ23B2V7-G DD1 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 -4 AZ23B3V0-G DD2 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 -3 AZ23B3V3-G DD3 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V6-G DD4 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V9-G DD5 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 -3 AZ23B4V3-G DD6 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 -1 AZ23B4V7-G DD7 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 2 AZ23B5V1-G DD8 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23B5V6-G DD9 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 6 AZ23B6V2-G DE0 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 7 AZ23B6V8-G DE1 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23B7V5-G DE2 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 3 7 AZ23B8V2-G DE3 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23B9V1-G DE4 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 5 8 AZ23B10-G DE5 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 AZ23B11-G DE6 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23B12-G DE7 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 6 9 AZ23B13-G DE8 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23B15-G DE9 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23B16-G DF0 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 8 9.5 AZ23B18-G DF1 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 8 9.5 AZ23B20-G DF2 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23B22-G DF3 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23B24-G DF4 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23B27-G DF5 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23B30-G DF6 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23B33-G DF7 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23B36-G DF8 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23B39-G DF9 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23B43-G DG0 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23B47-G DG1 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 10 12 AZ23B51-G DG2 50 51 52 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.7, 11-Dec-2019 Document Number: 85867 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) IF mA 103 Ω 103 102 5 4 3 2 10 Rzth TJ = 100 °C 1 Rzth = RthA x VZ x Δ VZ ΔTj 102 10-1 5 4 3 TJ = 25 °C 2 10-2 10 10-3 10 5 4 3 -4 negative 2 10-5 0 positive 1 0.2 0.4 0.6 0.8 1V 1 VF 18114 2 3 4 5 10 18121 Fig. 1 - Forward Characteristics 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 4 - Thermal Differential Resistance vs. Zener Voltage Ω 100 mW 500 7 5 4 400 Rzj Ptot 3 2 300 10 7 200 5 4 3 100 2 0 1 0 100 1 200 °C 4 5 10 2 3 4 5 100 V VZ mV/°C 25 Ω 103 Tj = 25 °C 7 5 4 2 3 Fig. 5 - Dynamic Resistance vs. Zener Voltage Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 2 18122 Tamb 18115 Rzj Tj = 25 °C IZ = 5 mA Δ VZ ΔTj 47 + 51 43 39 36 20 5 mA IZ = 1 mA 20 mA 15 10 102 7 5 5 4 3 0 2 10 0.1 18120 -5 2 3 4 5 1 2 IZ 3 4 5 10 mA Fig. 3 - Dynamic Resistance vs. Zener Current 1 18123 2 3 4 5 10 2 3 4 5 100 V VZ Fig. 6 - Temperature Dependence of Zener Voltage vs. Zener Voltage Rev. 1.7, 11-Dec-2019 Document Number: 85867 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com Vishay Semiconductors V 0.8 V 1.6 25 0.7 15 VZ at IZ = 5 mA 0.6 Δ VZ 1.2 Δ VZ 0.5 8 0.4 0.2 6.2 5.9 0.1 5.6 0 1 0.8 7 0.3 0.6 0.4 0.2 0 5.1 -1 0 20 40 60 80 100 120 140 C 18124 - 0.2 4.7 3.6 - 0.2 ΔVZ = Rzth x IZ 1.4 10 - 0.4 18127 1 10 4 5 2 100 V 3 4 5 Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mV/°C 100 V 5 ΔVZ = Rzth x IZ IZ = 5 mA 4 80 Δ VZ 60 3 40 2 20 1 0 IZ = 5 mA IZ = 2 mA 0 0 20 40 60 80 0 100 V VZ 18125 20 40 mA 50 Tj = 25 °C 8 7 5 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ 51 43 100 V 80 Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage V 9 6 60 VZ 18128 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Δ VZ 3 VZ at IZ = 5 mA Fig. 7 - Change of Zener Voltage vs. Junction Temperature Δ VZ ΔTj 2 Tj 8.2 30 4 36 3 20 2 1 Test current IZ 5 mA 10 0 IZ = 2 mA -1 0 18126 20 40 60 80 100 120 Tj 140 °C Fig. 9 - Change of Zener Voltage vs. Junction Temperature 0 0 18111 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 12 - Breakdown Characteristics Rev. 1.7, 11-Dec-2019 Document Number: 85867 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com mA 30 Vishay Semiconductors mA 10 10 12 Tj = 25 °C Tj = 25 °C 8 lZ lZ 15 20 18 Test current IZ 5 mA 6 39 51 43 47 22 4 27 Test 10 current IZ 5 mA 33 36 2 0 0 0 10 20 18112 40 V 30 0 VZ 10 20 30 40 50 60 70 80 90 100 V VZ 18113 Fig. 13 - Breakdown Characteristics Fig. 14 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.7, 11-Dec-2019 Document Number: 85867 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-G-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23. Sep. 2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.7, 11-Dec-2019 Document Number: 85867 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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