B125C800DM-E3/45

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • Ideal for automated placement • High surge current capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 ~ ~ TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Case Style DFM MECHANICAL DATA LINKS TO ADDITIONAL RESOURCES Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 3D 3D 3D Models Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked on body IF(AV) 0.9 A VRRM 65 V, 125 V, 200 V, 400 V, 600 V IFSM 45 A IR 10 μA VF at IF = 0.9 A 1.0 V TJ max. 125 °C Package DFM Circuit configuration Quad per     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V Maximum RMS input voltage R- and C-load VRMS 40 80 125 250 380 V PARAMETER Maximum average forward output current for free air operation at TA = 45 °C R- and L-load C-load 0.9 IF(AV) A 0.8 Maximum DC blocking voltage VDC 65 125 200 400 600 V Maximum peak working voltage VRWM 90 180 300 600 900 V 100 200 350 650 1000 Maximum non-repetitive peak voltage VRSM Maximum repetitive peak forward surge current IFRM Peak forward surge current single sine-wave on rated load IFSM 45 A I2t 10 A2s Rating for fusing at TJ = 125 °C (t < 100 ms) Minimum series resistor C-load at VRMS = ± 10 % Maximum load capacitance Operating junction temperature range Storage temperature range + 50 % - 10 % 10 V A RT 1.0 2.0 4.0 8.0 12.0  CL 5000 2500 1000 500 200 μF TJ -40 to +125 °C TSTG -40 to +150 °C Revision: 03-Sep-2020 Document Number: 88533 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode 0.9 A Maximum reverse current at rated repetitive peak voltage per diode SYMBOL B40 C800DM B80 C800DM B125 C800DM B250 C800DM B380 C800DM UNIT VF 1.0 V IR 10 μA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) B40 C800DM B80 C800DM B125 C800DM RJA 40 RJL 15 B250 C800DM B380 C800DM UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N B380C800DM-E3/45 UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.416 45 50 Tube Revision: 03-Sep-2020 Document Number: 88533 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor Average Forward Output Current (A) 1.0 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0.6 0 - 10 µF 10 - 100 µF > 100 µF 0.4 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0.2 0 0 20 40 60 80 100 120 Instantaneous Forward Surge Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 140 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 1 - Derating Curves Output Rectified Current for B40C800D...B125C800DM Fig. 4 - Typical Forward Characteristics Per Diode 10 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0 - 10 µF 10 - 100 µF > 100 µF 0.6 0.4 Mounted on P.C.B. with 0.06" (1.5 mm) Lead Length Copper Pads 0.51 x 0.51" (13 x 13 mm) 0.2 Instantaneous Reverse Current (µA) Average Forward Output Current (A) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Ambient Temperature (°C) 1.0 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Derating Curves Output Rectified Current for B250C800D...B360C800DM Fig. 5 - Typical Reverse Leakage Characteristics Per Diode 50 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 °C 10 ms Single Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 10 40 30 20 10 10 1.0 Cycle 0 1 0 10 100 1 10 100 Number of Cycles at 50 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 03-Sep-2020 Document Number: 88533 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFM 0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24) 0.335 (8.51) 0.320 (8.12) 0.080 (2.03) 0.050 (1.27) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.185 (4.69) 0.150 (3.81) 0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0) 0.075 (1.90) 0.055 (1.39) 0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) Revision: 03-Sep-2020 Document Number: 88533 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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