B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
SMA (DO-214AC)
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
Note
• These devices are not AEC-Q101 qualified
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
IFSM
30 A
VF
0.52 V, 0.75 V
TJ max.
125 °C, 150 °C
Package
SMA (DO-214AC)
Circuit configurations
Single
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
E3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
B120
B130
B140
B150
B160
B12
B13
B14
B15
B16
20
30
40
50
60
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
dV/dt
10 000
V/μs
Voltage rate of change (rated VR)
Operating junction temperature range
-65 to +125
TJ
Storage temperature range
-65 to +150
-65 to +150
TSTG
V
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
TEST CONDITIONS
1.0 A
Maximum reverse current at rated VR
SYMBOL
VF
TA = 25 °C
TA = 100 °C
(1)
IR (2)
B120
B130
B140
0.52
B150
B160
0.75
0.2
6.0
5.0
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 08-Jan-2021
Document Number: 88946
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
B120
B130
B140
RθJA (1)
95
RθJL (1)
30
B150
B160
UNIT
°C/W
Note
(1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B140-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
B140-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
0.8
Resistive or Inductive Load
B150, B160
B150, B160
1.0
0.8
B120, B130, B140
0.6
0.4
PCB Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.2
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
0
D = tp/T
tp
0.8
1.0
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
1.2
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Forward Power Loss Characteristics
0.8
40
B120, B130, B140
Peak Forward Surge Current (A)
D = 0.8
0.7
Average Power Loss (W)
D = 0.8
0.7
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
D = tp/T
tp
0.8
1.0
0
30
20
10
0
0
0.2
0.4
0.6
1.2
1
10
100
Average Forward Current
Number of Cycles at 50 Hz
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 08-Jan-2021
Document Number: 88946
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
Axis Title
Axis Title
100 000
1000
TJ = 25 °C
0.1
100
TJ = -40 °C
B120, B130, B140
2nd line
Instantaneous Reverse Current (µA)
2nd line
Instantaneous Forward Current (A)
TJ = 125 °C
1
10
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
10000
TJ = 150 °C
TJ = 150 °C
10 000
1000
1000
100
TJ = 125 °C
1st line
2nd line
10000
10
10
TJ = 25 °C
1
100
0.1
TJ = -40 °C
0.01
10
0.001
1.4
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
Axis Title
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
Junction Capacitance (pF)
2nd line
Instantaneous Forward Current (A)
1000
10000
10
1000
1
TJ = 125 °C
TJ = 25 °C
0.1
100
TJ = -40 °C
100
B120, B130, B140
B150, B160
B150, B160
10
0.1
10
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 08-Jan-2021
Document Number: 88946
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
