B2M, B4M, B6M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
~
• UL recognized, file number E54214
~
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style MBM
LINKS TO ADDITIONAL RESOURCES
MECHANICAL DATA
3D 3D
Case: MBM
3D Models
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
5 μA
VF at IF = 0.5 A
1.0 V
TJ max.
150 °C
Package
MBM
Circuit configuration
Quad
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2M
B2
B4
B6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
200
400
600
V
Device marking code
B4M
B6M
UNIT
Maximum DC blocking voltage
VDC
Maximum average forward output rectified current (fig. 1) on
glass-epoxy PCB
IF(AV)
0.5 (1)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
I2t
5.0
A2s
TJ, TSTG
-55 to +150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
Revision: 15-Jul-2020
Document Number: 88898
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2M, B4M, B6M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
IF = 0.5 A
SYMBOL
B2M
B4M
VF
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
UNIT
1.0
V
5.0
IR
TA = 125 °C
B6M
μA
100
13
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B2M
B4M
RθJA
90
RθJL
40
B6M
UNIT
°C/W
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.22
45
100
Tube
B2M-E3/45
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
0.8
0.7
0.6
0.5
Glass
Epoxy
PCB
0.4
0.3
0.2
0.1
30
25
f = 50 Hz
20
15
10
5
1.0 Cycle
Resistive or Inductive Load
0
0
0
20
40
60
80
100
120
140
160
1
10
100
Ambient Temperature (°C)
Number of Cycles
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 15-Jul-2020
Document Number: 88898
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2M, B4M, B6M
www.vishay.com
Vishay General Semiconductor
100
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
1
TJ = 25 °C
TJ = 125 °C
0.1
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
10
1
0.1
1.4
10
1
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage
Current (µA)
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style MBM
0.161 (4.10)
0.144 (3.65)
0.190 (4.83)
0.179 (4.55)
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.106 (2.70)
0.090 (2.30)
0.148 (3.75)
0.132 (3.35)
0.029 (0.74)
0.017 (0.43)
0.105 (2.67)
0.095 (2.41)
10° to 15°
0.016 (0.41)
0.006 (0.15)
0.147 (3.73)
0.137 (3.48)
0.028 (0.71)
0.020 (0.51)
Revision: 15-Jul-2020
Document Number: 88898
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000
