B350A-M3, B360A-M3
www.vishay.com
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMA (DO-214AC)
Cathode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V, 60 V
IFSM
50 A
VF at IF = 3.0 A
0.55 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
B350A
B360A
B35
B36
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
50
60
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
IF = 3.0 A
Maximum reverse current
Rated VR
Typical junction capacitance
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
SYMBOL
VF (1)
IR (2)
CJ
TYP.
MAX.
0.64
0.72
0.55
0.62
UNIT
V
-
200
μA
2.9
10
mA
145
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 08-Mar-2021
Document Number: 89414
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B350A-M3, B360A-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
B350A
B360A
RθJA (1)
72
RθJL (1)
12
UNIT
°C/W
Note
(1) PCB mounted with 0.32" x 0.32" (8 mm x 8 mm) copper pad areas. T measured at lead terminal mount.
L
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B360A-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
B360A-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
2nd line
Instantaneous Forward Current (A)
Resistive or Inductive Load
Average Forward Current (A)
10000
100
3.0
2.5
2.0
1.5
1.0
P.C.B. Mounted on
0.32" x 0.32" (8 mm x 8 mm)
Copper Pad Areas
0.5
TJ = 150 °C
1000
10
TJ = 125 °C
1
100
TJ = 25 °C
TJ = -40 °C
10
0.1
0
80
100
90
120
110
130
140
150
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
Axis Title
D = 0.8
2.0
D = 0.2
D = 0.1
1.5
D = 1.0
1.0
T
0.5
D = tp/T
tp
0
TJ = 150 °C
10 000
1000
TJ = 125 °C
100
1000
1st line
2nd line
D = 0.5
2nd line
Instantaneous Reverse Current (µA)
D = 0.3
Average Power Loss (W)
10000
100 000
2.5
10
1
TJ = 25 °C
0.1
100
0.01
0.001
TJ = -40 °C
10
0.0001
0
0.5
1.0
1.5
2.0
3.0
3.5
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 08-Mar-2021
Document Number: 89414
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B350A-M3, B360A-M3
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 08-Mar-2021
Document Number: 89414
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000