B360B-E3/52T

B350B, B360B www.vishay.com Vishay General Semiconductor Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS Package DO-214AA (SMB) IF(AV) 3.0 A VRRM 50 V, 60 V IFSM 60 A VF at IF = 3.0 A 0.51 V TJ max. 150 °C Diode variations Single die MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B350B B360B B35 B36 50 60 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 3.0 A Maximum reverse current Rated VR TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL VF (1) IR (2) TYP. MAX. UNIT 0.58 0.66 0.51 0.59 - 100 μA 3 10 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 17-Jan-14 Document Number: 89122 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B350B, B360B www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance B350B B360B RJA (1) 70 RJM (1) 15 UNIT °C/W Note (1) PCB. mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas, thermal resistance R JA - junction to ambient, RJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B360B-E3/52T 0.096 52T 750 7" diameter plastic tape and reel B360B-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) 3.0 Average Forward Current (A) Resistive or Inductive Load 2.5 2.0 1.5 1.0 TM Measured at Mount of Terminal 0.5 25 75 50 100 TA = 25 °C 1 150 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 2.0 D = 0.3 1.8 D = 0.5 D = 0.8 D = 0.2 1.6 D = 1.0 1.4 D = 0.1 1.2 1.0 T 0.8 0.6 0.4 D = tp/T 0.2 tp 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous Reverse Current (mA) TM - Mount Temperature (°C) 2.2 Average Power Loss (W) 125 TA = 125 °C 10 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 0 TA = 150 °C 100 TA = 150 °C 10 1 TA = 125 °C 0.1 0.01 TA = 25 °C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Revision: 17-Jan-14 Document Number: 89122 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B350B, B360B www.vishay.com Vishay General Semiconductor                 Junction Capacitance (pF) 1000 100 10 0.1 1 100 10 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Revision: 17-Jan-14 Document Number: 89122 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000