B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface-Mount Bridge Rectifier
FEATURES
~
• UL recognition, file number E54214
~
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
~
~
MBS (TO-269AA)
LINKS TO ADDITIONAL RESOURCES
3D 3D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBS (TO-269AA)
3D Models
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
5 μA
VF at IF = 0.5 A
1.0 V
TJ max.
150 °C
Package
MBS (TO-269AA)
Circuit configuration
Quad
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
B2
B4
B6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current on glass-epoxy PCB
(fig. 1)
IF(AV)
0.5 (1)
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
30
A
I2t
5.0
A2s
TJ, TSTG
-55 to +150
°C
Device marking code
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
B4S
B6S
UNIT
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
Revision: 04-Aug-2020
Document Number: 88893
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
SYMBOL
VALUES
UNIT
VF
1.0
V
IF = 0.5 A
Maximum DC reverse current at rated DC blocking voltage per diode
Typical junction capacitance per diode
TA = 25 °C
5.0
IR
TA = 125 °C
4.0 V, 1 MHz
μA
100
CJ
13
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B2S
B4S
RJA
90
RJL
40
B6S
UNIT
°C/W
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.22
80
3000
13" diameter paper tape and reel
B2S-E3/80
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
0.8
0.7
0.6
0.5
Glass
Epoxy
PCB
0.4
0.3
0.2
0.1
Resistive or Inductive Load
0
0
20
40
60
80
100
120
140
1
TJ = 25 °C
TJ = 125 °C
0.1
0.01
0.4
160
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
35
1000
Instantaneous Reverse Leakage
Current (µA)
Peak Forward Surge Current (A)
TJ = 150 °C
30
25
f = 50 Hz
20
15
10
5
1.0 Cycle
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0
1
10
100
10
20
30
40
50
60
70
80
90
100
Number of Cycles
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 04-Aug-2020
Document Number: 88893
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
100
10
1
0.1
10
1
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.029 (0.74)
0.017 (0.43)
MBS (TO-269AA)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to 8°
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.106 (2.70)
0.090 (2.30)
0.114 (2.90)
0.094 (2.40)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.105 (2.67)
0.095 (2.41)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
Revision: 04-Aug-2020
Document Number: 88893
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024
