0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
B80C800G-E4/51

B80C800G-E4/51

  • 厂商:

    TFUNK(威世)

  • 封装:

    WOG

  • 描述:

    DIODE BRIDGE 0.9A 125V WOG

  • 数据手册
  • 价格&库存
B80C800G-E4/51 数据手册
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier FEATURES + • Ideal for printed circuit boards ~ • High case dielectric strength ~ e4 • High surge current capability ~ + − ~ • Typical IR less than 0.1 μA − • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style WOG • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS Package TYPICAL APPLICATIONS WOG IF(AV) 0.9 A VRRM 65 V, 125 V, 200 V, 400 V, 600 V IFSM 45 A IR 10 μA VF at IF = 0.9 A 1.0 V TJ max. 125 °C Diode variations Quad General purpose use in AC/DC bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers, and home appliances applications. MECHANICAL DATA Case: WOG Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated J-STD-002 and JESD22-B102 leads, solderable per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL B40 C800G B80 C800G B125 C800G B250 C800G B380 C800G UNIT Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V Maximum RMS input voltage R- and C-load VRMS 40 80 125 250 380 V PARAMETER Maximum average forward output current for free air operation at TA = 45 °C R- and L-load C-load Maximum non-repetitive peak voltage 0.9 IF(AV) VRSM A 0.8 100 200 350 600 1000 V Maximum DC blocking voltage VDC 65 125 200 400 600 V Maximum peak working voltage VRWM 90 180 300 600 900 V Maximum repetitive peak forward surge current IFRM 10 Peak forward surge current single sine-wave on rated load IFSM 45 A I2t 10 A2s Rating for fusing at TJ = 125 °C (t < 100 ms) Minimum series resistor C-load at VRMS = ± 10 % + 50 % - 10 % Maximum load capacitance Operating junction temperature range Storage temperature range A RT 1.0 2.0 4.0 8.0 12  CL 5000 2500 1000 500 200 μF TJ - 40 to + 125 °C TSTG - 40 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode 0.9 A Maximum reverse current at rated repetitive peak voltage per diode Revision: 08-Jul-13 SYMBOL B40 C800G B80 C800G B125 C800G B250 C800G B380 C800G UNIT VF 1.0 V IR 10 μA Document Number: 88534 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) B40 C800G B80 C800G B125 C800G RJA 36 RJL 11 B250 C800G B380 C800G UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22" (5.5 mm x 5.5 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B380C800G-E4/51 1.12 51 100 Plastic bag RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 50 to 60 Hz Resistive or Inductive Load 0.8 0 - 10 µF 10 - 100 µF > 100 µF Capacitive Load 0.6 0.4 P.C.B. 0.375" (9.5 mm) 0.2 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) Peak Forward Surge Current (A) Bridge Output Full Wave Rectified Current Average (A) 1.0 40 30 20 10 1.0 Cycle 0 0 0 20 40 60 80 100 120 140 100 10 1 Ambient Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Derating Curves Output Rectified Current for B40C800G...B125C800G Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge Current (A) 1.0 Bridge Output Full Wave Rectified Current Average (A) TJ = 25 °C 10 ms Single Sine-Wave 50 to 60 Hz Resistive or Inductive Load 0.8 Capacitive Load 0 - 10 µF 10 - 100 µF > 100 µF 0.6 0.4 P.C.B. 0.375" (9.5 mm) 0.2 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) 0 0 20 40 60 80 100 120 140 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Derating Curves Output Rectified Current for B250C800G...B380C800G Fig. 4 - Typical Forward Characteristics Per Diode Revision: 08-Jul-13 Document Number: 88534 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C800G, B80C800G, B125C800G, B250C800G, B380C800G www.vishay.com Vishay Semiconductors 100 1 Junction Capacitance (pF) Instantaneous Reverse Current (µA) 10 TJ = 100 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = 25 °C 1 0.1 0.01 0 20 40 60 80 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style WOG 0.388 (9.86) 0.348 (8.84) 0.220 (5.6) 0.160 (4.1) 1.0 (25.4) MIN. 0.032 (0.81) 0.028 (0.71) 0.348 (8.84) 0.308 (7.82) 0.060 (1.52) 0.020 (0.51) 0.220 (5.6) 0.180 (4.6) 0.220 (5.6) 0.180 (4.6) Revision: 08-Jul-13 Document Number: 88534 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
B80C800G-E4/51 价格&库存

很抱歉,暂时无法提供与“B80C800G-E4/51”相匹配的价格&库存,您可以联系我们找货

免费人工找货
B80C800G-E4/51
  •  国内价格 香港价格
  • 1+4.736821+0.58760
  • 10+3.7165810+0.46104
  • 100+2.75100100+0.34126
  • 500+2.17712500+0.27007
  • 1000+1.985821000+0.24634
  • 3000+1.976713000+0.24521

库存:2646

B80C800G-E4/51
  •  国内价格
  • 1+4.46779
  • 10+3.49398
  • 52+2.05986
  • 143+1.94750
  • 1000+1.86977
  • 3000+1.86018

库存:2646