BA782S-G3-18

BAT81S, BAT82S, BAT83S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS • • • • • • • Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black General purpose and switching Schottky barrier diode HF-detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC/DC converter for notebooks Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAT81S BAT82S BAT83S TYPE DIFFERENTIATION VR = 40 V VR = 50 V VR = 60 V ORDERING CODE BAT81S-TR or BAT81S-TAP BAT82S-TR or BAT82S-TAP BAT83S-TR or BAT83S-TAP CIRCUIT CONFIGURATION Single Single Single TYPE MARKING REMARKS BAT81S BAT82S BAT83S Tape and reel/ammopack Tape and reel/ammopack Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward continuous current Peak forward surge current Repetitive peak forward current PART BAT81S BAT82S BAT83S SYMBOL VR VR VR IF IFSM IFRM tp ≤ 10 ms tp ≤ 1 s VALUE 40 50 60 30 500 150 UNIT V V V mA mA mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION I = 4 mm, TL = constant SYMBOL RthJA Tj Tstg VALUE 320 125 -65 to +150 UNIT K/W °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Diode capacitance TEST CONDITION IF = 0.1 mA IF = 1 mA IF = 15 mA VR = VRmax. VR = 1 V, f = 1 MHz SYMBOL VF VF VF IR CD MIN. TYP. MAX. 330 410 1000 200 1.6 UNIT mV mV mV nA pF Rev. 2.0, 04-Apr-17 Document Number: 85512 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT81S, BAT82S, BAT83S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PR - Reverse Power Dissipation (mW) 14 1000 VR = 60 V I F - Forward Current (mA) 12 RthJA = 540 K/W 10 8 6 Limit at PPRR - Limit at100 100%%VRVR 4 PR - Limit at 80 % VR 100 Tj = 125 °C 10 Tj = 25 °C 1 0.1 2 0.01 0 25 50 75 100 125 0 150 Tj - Junction Temperature (°C) 15794 1 1.5 2.0 Fig. 3 - Forward Current vs. Forward Voltage Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 1000 2.0 CD - Diode Capacitance (pF) V R = V RRM I R - Reverse Current (µA) 0.5 V F - Forward Voltage (V) 15796 100 10 1 f = 1 MHz 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 25 50 75 100 125 0.1 150 15797 Tj - Junction Temperature (°C) 15795 Fig. 2 - Reverse Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.0, 04-Apr-17 Document Number: 85512 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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