BAQ133, BAQ134, BAQ135
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, Low Leakage Current
FEATURES
• Silicon planar diodes
• Very low reverse current
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: QuadroMELF (SOD-80)
Weight: approx. 34 mg
Cathode band color: black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
CIRCUIT
CONFIGURATION
REMARKS
BAQ133
VRRM = 40 V
BAQ133-GS18 or BAQ133-GS08
-
Single
Tape and reel
BAQ134
VRRM = 70 V
BAQ134-GS18 or BAQ134-GS08
-
Single
Tape and reel
BAQ135
VRRM = 140 V
BAQ135-GS18 or BAQ135-GS08
-
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
PART
SYMBOL
VALUE
UNIT
BAQ133
VRRM
40
V
BAQ134
VRRM
70
V
BAQ135
VRRM
140
V
BAQ133
VR
30
V
BAQ134
VR
60
V
BAQ135
VR
125
V
tp = 1 μs
Forward continuous current
IFSM
2
A
IF
200
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 2.0, 25-Feb-2020
Document Number: 85536
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAQ133, BAQ134, BAQ135
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
PART
SYMBOL
IF = 100 mA
VF
E ≤ 300 Ix, rated VR
IR
E ≤ 300 Ix, rated VR, Tj = 125 °C
IR
Reverse current
TYP.
MAX.
1
UNIT
1
V
3
nA
0.5
μA
E ≤ 300 Ix, VR = 15 V
BAQ133
IR
0.5
1
nA
E ≤ 300 Ix, VR = 30 V
BAQ134
IR
0.5
1
nA
E ≤ 300 Ix, VR = 60 V
BAQ135
IR
0.5
1
nA
BAQ133
V(BR)
40
BAQ134
V(BR)
70
V
BAQ135
V(BR)
140
V
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
Breakdown voltage
MIN.
Diode capacitance
VR = 0, f = 1 MHz
V
CD
3
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
I F - Forward Current (mA)
I R - Reverse Current (nA)
V R = VRRM
1000
Scattering Limit
100
10
Scattering Limit
10
1
0.1
1
0
94 9079
Tj = 25 °C
100
40
80
120
160
0
200
Tj - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
94 9078
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 2.0, 25-Feb-2020
Document Number: 85536
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAQ133, BAQ134, BAQ135
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF (SOD-80)
1.6 (0.063)
1.4 (0.055)
1.
7
(0
.0
gl
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Rev. 2.0, 25-Feb-2020
Document Number: 85536
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
1
Document Number: 91000