BAS16L
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
Available
• Fast switching diode
1
• Leadless ultra small DFN1006-2A package
(1 mm × 0.6 mm × 0.45 mm)
2
• Power dissipation better than SOT-23
• Surface-mounted device (SMD) plastic package
with visible and sidewall plated / wettable flanks
LINKS TO ADDITIONAL RESOURCES
• Soldering can be checked by standard visual
inspection. No X-ray inspection necessary to
meet automotive AOI requirements
3D 3D
3D Models
Models
Application
Notes
• AEC-Q101 qualified available
MECHANICAL DATA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case: DFN1006-2A
Weight: 0.83 mg
Molding compound flammability rating: UL 94 V-0
Terminals: high temperature soldering guaranteed:
Peak temperature max. 260 °C
Packaging codes / options:
08/10K per 7" reel (8 mm tape)
PARTS TABLE
BAS16L
ORDERING CODE
AEC-Q101 QUALIFIED
BAS16L-G3-08
no
BAS16L-HG3-08
yes
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
D
PART
Tape and reel
Single
.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
on FR-4 board with recommended soldering footprint
SYMBOL
VALUE
VR
100
V
IF
250
mA
IFSM
1.7
tp = 1 μs
Non repetitive forward current (1)
tp = 1 ms
9
tp = 1 s
Repetitive peak forward current
Power dissipation
TL = 100 °C, tp = ≤ 1 ms, D = 0.05
on FR-4 board with recommended soldering footprint
RthJL = 100 K/W
UNIT
A
0.5
IFRM
Ptot
500
mA
300
mW
1250
mW
Note
(1) Square wave, T = 25 °C prior to surge
j
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
according to JEDEC® 51-3 on FR-4 board with
recommended soldering footprint
RthJA
420
K/W
Thermal resistance junction to lead
RthJL
100
K/W
Maximum junction temperature
Tj max.
150
°C
Storage temperature range
Tstg
-55 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Thermal resistance junction to
ambient air
Rev. 1.1, 06-Apr-2021
Document Number: 86187
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16L
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
TYP.
IF = 150 mA
IF = 50 mA
Forward voltage
VF
IF = 10 mA
IF = 1 mA
UNIT
1.250
V
1.0
V
0.86
V
0.715
V
nA
VR = 80 V
IR
500
VR = 80 V, TJ = 150 °C
IR
100
μA
VR = 100 V
IR
1
μA
VR = 0 V, f = 1 MHz
CD
2
pF
IF = 10 mA, IR = 10 mA, iR = 1 mA
trr
4
ns
Leakage current
Diode capacitance
Reverse recovery time
MAX.
0.36
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
Axis Title
10000
1000
10000
0.5
f = 1 MHz
100
0.4
TJ = 150 °C
1000
10
1st line
2nd line
0.2
2nd line
IR (µA)
0.3
1st line
2nd line
2nd line
CD (pF)
1000
125 °C
1
100
100
0.1
0.1
0
10
0
20
40
60
80
25 °C
10
0.01
100
0
20
40
60
80
100
VR (V)
VR (V)
Fig. 1 - Typical Capacitance vs. Reverse Voltage
Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage
Axis Title
10000
1.5
TJ = -40 °C
1000
1st line
2nd line
2nd line
VF (V)
1.0
TJ = 25 °C
100
0.5
TJ = 125 °C
TJ = 150 °C
0
0.001
0.01
0.1
1
10
100
10
1000
IF (mA)
Fig. 2 - Typical Forward Voltage vs. Forward Current
Rev. 1.1, 06-Apr-2021
Document Number: 86187
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16L
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: DFN1006-2A
0.5 ± 0.05
0.25 ± 0.05
0.23 ± 0.05
0.6 ± 0.05
min. 0.1
0.45 ± 0.05
max. 0.05
0.4 Ref.
Orientation identification
1 ± 0.05
Footprint recommendation:
1.4
Document no.: S8-V3906.04-059 (4)
Created - Date: 11-July-2018
Rev.3 - Date: 02-Nov-2020
0.3
0.55
0.3
0.4
23170
Rev. 1.1, 06-Apr-2021
Document Number: 86187
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16L
www.vishay.com
Vishay Semiconductors
CARRIER TAPE DFN1006-2A
max.
5°
1.15 ±0.05
Ø 0.4 ±0.1
Section
0.18 ±0.02
+ 0.3
8 - 0.1
2 ±0.05
A
3.5 ±0.05
+0.1
Ø 1.5 0.0
1.75 ±0.1
A-A
4 ±0.1
B
B
2 ±0.05
A
+ 0.05
0.55 - 0.03
B-B
S8-V-3906.04-063 (4)
created 28.10.2019
+ 0.05
0.55 - 0.03
Section
max. 5°
+ 0.06
0.66 - 0.02
OHMS
SQ
Cummulative tolerances of 10 sprocket holes is ± 0.2 mm
surface resistance: 105 - 1011
ORIENTATION IN CARRIER TAPE DFN1006-2A
Unreeling direction
Cathode marking
S8-V-3906.04-064 (4)
created 28.10.2019
Top view
Rev. 1.1, 06-Apr-2021
Document Number: 86187
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
1
Document Number: 91000
