BAS170WS-G
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Schottky diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
DESIGN SUPPORT TOOLS click logo to get started
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
please
see
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS170WS-G
ORDERING CODE
BAS170WS-G3-08 or BAS170WS-G3-18
CIRCUIT
CONFIGURATION
TYPE MARKING
REMARKS
Single
7G
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation (1)
TEST CONDITION
tp < 1 s
SYMBOL
VRRM
IF
IFSM
Ptot
VALUE
70
70
600
200
UNIT
V
mA
mA
mW
VALUE
650
125
-55 to +125
-65 to +150
UNIT
K/W
°C
°C
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
Junction temperature
Operating temperature range
Storage temperature range
TEST CONDITION
SYMBOL
RthJA
Tj
Top
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current
Forward voltage
Forward voltage (1)
Diode capacitance
Differential forward resistance
TEST CONDITION
IR = 10 μA (pulsed)
VR = 50 V
VR = 70 V
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 0 V, f = 1 MHz
IF = 5 mA, f = 10 kHz
SYMBOL
V(BR)
IR
IR
VF
VF
VF
CD
rf
MIN.
70
TYP.
375
705
880
1.5
34
MAX.
0.1
10
410
750
1000
2
UNIT
V
μA
μA
mV
mV
mV
pF
Ω
Note
(1) Pulse test; t ≤ 300 μs
p
Rev. 1.3, 02-Jun-17
Document Number: 85236
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS170WS-G
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 1.3, 02-Jun-17
Document Number: 85236
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
