BAS170WS-G3-18

BAS170WS-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • Schottky diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing DESIGN SUPPORT TOOLS click logo to get started • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance www.vishay.com/doc?99912 Models Available MECHANICAL DATA please see Case: SOD-323 Weight: approx. 4.0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART BAS170WS-G ORDERING CODE BAS170WS-G3-08 or BAS170WS-G3-18 CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single 7G Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Repetitive peak reverse voltage Forward continuous current Surge forward current Power dissipation (1) TEST CONDITION tp < 1 s SYMBOL VRRM IF IFSM Ptot VALUE 70 70 600 200 UNIT V mA mA mW VALUE 650 125 -55 to +125 -65 to +150 UNIT K/W °C °C °C Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air (1) Junction temperature Operating temperature range Storage temperature range TEST CONDITION SYMBOL RthJA Tj Top Tstg Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse breakdown voltage Leakage current Forward voltage Forward voltage (1) Diode capacitance Differential forward resistance TEST CONDITION IR = 10 μA (pulsed) VR = 50 V VR = 70 V IF = 1 mA IF = 10 mA IF = 15 mA VR = 0 V, f = 1 MHz IF = 5 mA, f = 10 kHz SYMBOL V(BR) IR IR VF VF VF CD rf MIN. 70 TYP. 375 705 880 1.5 34 MAX. 0.1 10 410 750 1000 2 UNIT V μA μA mV mV mV pF Ω Note (1) Pulse test; t ≤ 300 μs p Rev. 1.3, 02-Jun-17 Document Number: 85236 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS170WS-G www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 1.3, 02-Jun-17 Document Number: 85236 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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