BAS285-GS18

BAS285 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • Integrated discharge protection ring against static • Very low forward voltage • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS LINKS TO ADDITIONAL RESOURCES • Applications where a very low forward voltage is required 3D 3D 3D Models MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS VR = 30 V BAS285-GS18 or BAS285-GS08 Single Tape and reel BAS285 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 30 V Reverse voltage Peak forward surge current Repetitive peak forward current tp = 10 ms IFSM 5 A tp ≤ 1 s IFRM 300 mA IF 200 mA IFAV 200 mA Forward current Average forward current THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction to ambient air TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W Tj 125 °C Tstg -65 to +150 °C Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Diode capacitance TEST CONDITION SYMBOL MAX. UNIT IF = 0.1 mA VF MIN. TYP. 240 mV IF = 1 mA VF 320 mV IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV VR = 25 V, tp = 300 μs IR 2.3 μA VR = 1 V, f = 1 MHz CD 10 pF Rev. 2.1, 16-Nov-2021 Document Number: 85501 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS285 www.vishay.com Vishay Semiconductors 200 10 VR = 30 V 180 CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 20 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 Tj - Junction Temperature (°C) 15822 0.1 150 15825 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage IR - Reverse Current (µA) 1000 VR = VRRM 100 10 1 25 50 75 100 125 150 Tj - Junction Temperature (°C) 15823 Fig. 2 - Reverse Current vs. Junction Temperature IF - Forward Current (mA) 1000 Tj = 125 °C 100 Tj = 25 °C 10 1 0.1 0 15824 0.5 1.0 1.5 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 2.1, 16-Nov-2021 Document Number: 85501 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS285 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF (SOD-80) 12071 Rev. 2.1, 16-Nov-2021 Document Number: 85501 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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