BAS33, BAS34
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Vishay Semiconductors
Small Signal Switching Diodes
FEATURES
• Silicon planar diodes
• Very low reverse current
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
TYPE DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
CIRCUIT
CONFIGURATION
REMARKS
BAS33
VRRM = 40 V
BAS33-TAP or BAS33-TR
BAS33
Single
Tape and reel / ammopack
BAS34
VRRM = 70 V
BAS34-TAP or BAS34-TR
BAS34
Single
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
PART
SYMBOL
VALUE
UNIT
BAS33
VRRM
40
V
BAS34
VRRM
70
V
BAS33
VR
30
V
BAS34
tp = 1 μs
VR
60
V
IFSM
2
A
IF
200
mA
Forward continuous current
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 1.9, 26-Nov-2021
Document Number: 85541
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS33, BAS34
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
PART
SYMBOL
IF = 100 mA
VF
E ≤ 300 Ix, VR
IR
E ≤ 300 Ix, VR, Tj = 125 °C
IR
MIN.
TYP.
MAX.
1
UNIT
1
V
3
nA
0.5
μA
E ≤ 300 Ix, VR = 15 V
BAS33
IR
0.5
1
nA
E ≤ 300 Ix, VR = 30 V
BAS34
IR
0.5
1
nA
Breakdown voltage
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
BAS33
V(BR)
40
BAS34
V(BR)
70
Diode capacitance
VR = 0 V, f = 1 MHz,
V
V
CD
3
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
I F - Forward Current (mA)
I R - Reverse Current (nA)
V R = VRRM
1000
Scattering Limit
100
10
Tj = 25 °C
100
Scattering Limit
10
1
0.1
1
0
40
80
120
160
0
200
Tj - Junction Temperature (°C)
94 9079
94 9078
Fig. 1 - Reverse Current vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.9, 26-Nov-2021
Document Number: 85541
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000