BAS40L-G3-08

BAS40L www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES 1 • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm) 2 • Power dissipation better than SOT-23 LINKS TO ADDITIONAL RESOURCES • Surface-mounted device (SMD) plastic package with visible and sidewall plated / wettable flanks 3D 3D 3D Models Models Available Application Notes Case: DFN1006-2A • Soldering can be checked by standard visual inspection. No X-ray inspection necessary to meet automotive AOI requirements Weight: 0.83 mg • AEC-Q101 qualified available Molding compound flammability rating: UL 94 V-0 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Terminals: high temperature soldering guaranteed: Peak temperature max. 260 °C Packaging codes/options: 08/10K per 7" reel (8 mm tape) PARTS TABLE PART BAS40L ORDERING CODE AEC-Q101 QUALIFIED BAS40L-G3-08 no BAS40L-HG3-08 yes CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single A. Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current on FR-4 board with recommended soldering footprint SYMBOL VALUE VR 40 V IF 200 mA IFSM 200 Tj = 25 °C, tp = 10 ms Non-repetitive peak forward current Tj = 100 °C, tp = 10 ms 500 Tj = 125 °C, tp = 20 μs Power dissipation on FR-4 board with recommended soldering footprint RthJL = 100 K/W UNIT mA 500 Ptot 300 mW 1250 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT according to JEDEC® 51-3 on FR-4 board with recommended soldering footprint RthJA 420 K/W Thermal resistance junction to lead RthJL 100 K/W Maximum junction temperature Tj max. 150 °C Storage temperature range Tstg -55 to +150 °C Operating temperature range Top -55 to +150 °C Thermal resistance junction to ambient air Rev. 1.1, 16-Mar-2021 Document Number: 86189 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40L www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. VR = 40 V, Tj = 25 °C Leakage current VR = 30 V, Tj = 150 °C IR VR = 40 V, Tj = 150 °C IF = 1 mA Forward voltage IF = 10 mA VF IF = 40 mA Diode capacitance VR = 0 V, f = 1 MHz CD MAX. UNIT 10 μA 200 μA 500 μA 400 mV 560 mV 1000 mV 2.9 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 4 10000 1000 10000 f = 1 MHz 3.5 TJ = 150 °C 100 3 1.5 10 125 °C 1st line 2nd line 2 2nd line IR (µA) 1st line 2nd line 2nd line CD (pF) 1000 1000 2.5 1 100 100 1 0.1 0.5 25 °C 0 10 0 10 20 30 10 0.01 40 10 15 20 25 30 35 40 VR (V) VR (V) Fig. 1 - Typical Capacitance vs. Reverse Voltage Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage Axis Title 10000 1.5 TJ = -40 °C 1000 1st line 2nd line 2nd line VF (V) 1.0 TJ = 25 °C 100 0.5 TJ = 125 °C 0 0.001 TJ = 150 °C 0.01 0.1 1 10 100 10 1000 IF (mA) Fig. 2 - Typical Forward Voltage vs. Forward Current Rev. 1.1, 16-Mar-2021 Document Number: 86189 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40L www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: DFN1006-2A 0.5 ± 0.05 0.25 ± 0.05 0.23 ± 0.05 0.6 ± 0.05 min. 0.1 0.45 ± 0.05 max. 0.05 0.4 Ref. Orientation identification 1 ± 0.05 Footprint recommendation: 1.4 Document no.: S8-V3906.04-059 (4) Created - Date: 11-July-2018 Rev.3 - Date: 02-Nov-2020 0.3 0.55 0.3 0.4 23170 Rev. 1.1, 16-Mar-2021 Document Number: 86189 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40L www.vishay.com Vishay Semiconductors CARRIER TAPE DFN1006-2A max. 5° 1.15 ±0.05 Ø 0.4 ±0.1 Section 0.18 ±0.02 + 0.3 8 - 0.1 2 ±0.05 A 3.5 ±0.05 +0.1 Ø 1.5 0.0 1.75 ±0.1 A-A 4 ±0.1 B B 2 ±0.05 A + 0.05 0.55 - 0.03 B-B S8-V-3906.04-063 (4) created 28.10.2019 + 0.05 0.55 - 0.03 Section max. 5° + 0.06 0.66 - 0.02 OHMS SQ Cummulative tolerances of 10 sprocket holes is ± 0.2 mm surface resistance: 105 - 1011 ORIENTATION IN CARRIER TAPE DFN1006-2A Unreeling direction Cathode marking S8-V-3906.04-064 (4) created 28.10.2019 Top view Rev. 1.1, 16-Mar-2021 Document Number: 86189 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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