BAS70-00-G to BAS70-06-G
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Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
BAS70-00-G
BAS70-04-G
3
3
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
2
1
2
1
BAS70-05-G
BAS70-06-G
3
3
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
Top View
1
2
18/10K per 13" reel (8 mm tape), 10K/box
2
1
08/3K per 7" reel (8 mm tape), 15K/box
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
BAS70-00-G
BAS70-00-G3-08 or BAS70-00-G3-18
Single
73G
Tape and reel
BAS70-04-G
BAS70-04-G3-08 or BAS70-04-G3-18
Dual serial
74G
Tape and reel
BAS70-05-G
BAS70-05-G3-08 or BAS70-05-G3-18
Common cathode
75G
Tape and reel
BAS70-06-G
BAS70-06-G3-08 or BAS70-06-G3-18
Common anode
76G
Tape and reel
UNIT
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Forward continuous current
(1)
Surge forward current (1)
tp < 1 s
Power dissipation (1)
SYMBOL
VALUE
VRRM = VRRM = VR
70
V
IF
200
mA
IFSM
600
mA
Ptot
200
mW
Note
(1) Device on fiberglass substrate, see layout on next page
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA
500
K/W
Tj
125
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +125
°C
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Device on fiberglass substrate, see layout on next page
Rev. 1.2, 13-Feb-18
Document Number: 85157
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS70-00-G to BAS70-06-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reserve breakdown voltage
IR = 10 μA (pulsed)
V(BR)
70
Leakage current
VR = 50 V
IR
Forward voltage
IF = 1.0 mA
VF
Forward voltage (1)
IF = 15 mA
VF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
IF = IR = 10 mA, iR = 1 mA,
RL = 100
trr
Reserve recovery time
TYP.
MAX.
UNIT
V
20
100
nA
410
mV
1000
mV
2
pF
5
ns
1.5
Note
(1) Pulse test; t 300 μs
p
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.2, 13-Feb-18
Document Number: 85157
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2019
1
Document Number: 91000
