BAS70-00 to BAS70-06
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
BAS70-04
BAS70-00
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
3
3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Top View
1
1
2
MECHANICAL DATA
2
Case: SOT-23
BAS70-05
BAS70-06
Weight: approx. 8.8 mg
3
3
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
Top View
08/3K per 7" reel (8 mm tape), 15K/box
1
2
1
2
PARTS TABLE
PART
BAS70-00
BAS70-04
BAS70-05
BAS70-06
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
Single diode
73
Dual diodes serial
74
BAS70-00-E3-08 or BAS70-00-E3-18
BAS70-00-HE3-08 or BAS70-00-HE3-18
BAS70-04-E3-08 or BAS70-04-E3-18
BAS70-04-HE3-08 or BAS70-04-HE3-18
BAS70-05-E3-08 or BAS70-05-E3-18
BAS70-05-HE3-08 or BAS70-05-HE3-18
BAS70-06-E3-08 or BAS70-06-E3-18
BAS70-06-HE3-08 or BAS70-06-HE3-18
REMARKS
Tape and reel
Dual diodes common cathode
75
Dual diodes common anode
76
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Forward continuous current
(1)
Surge forward current (1)
tp < 1 s
Power dissipation (1)
SYMBOL
VALUE
UNIT
VRRM = VRRM = VR
70
V
mA
IF
200
IFSM
600
mA
Ptot
200
mW
Note
(1) Device on fiberglass substrate, see layout on next page.
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA
500
K/W
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 125
°C
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Device on fiberglass substrate, see layout on next page.
Rev. 2.0, 25-Feb-13
Document Number: 85702
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS70-00 to BAS70-06
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reserve beakdown voltage
IR = 10 μA (pulsed)
V(BR)
70
Leakage current
VR = 50 V
IR
Forward voltage
IF = 1.0 mA
VF
Forward voltage (1)
IF = 15 mA
VF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
IF = IR = 10 mA, iR = 1 mA,
RL = 100
trr
Reserve recovery time
TYP.
MAX.
UNIT
V
20
100
nA
410
mV
1000
mV
2
pF
5
ns
1.5
Note
(1) Pulse test; t 300 μs
p
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.0, 25-Feb-13
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document Number: 85702
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 13-Jun-16
1
Document Number: 91000
