BAS85-M
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• For general purpose applications
• This diode features low turn-on voltage
• The devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
APPLICATIONS
3D Models
• Applications where a very low forward voltage is required
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAS85-M
ORDERING CODE
CIRCUIT CONFIGURATION
REMARKS
BAS85-M-18 or BAS85-M-08
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
Forward continuous current (1)
Peak forward current (1)
Surge forward current (1)
Power dissipation (1)
TEST CONDITION
tp < 1 s
Tamb = 65 °C
SYMBOL
VR
IF
IFM
IFSM
Ptot
VALUE
30
200
300
600
200
UNIT
V
mA
mA
mA
mW
Note
(1) Valid provided that electrodes are kept at ambient temperature.
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
RthJA
Tj
Tstg
VALUE
430
125
-55 to +150
UNIT
K/W
°C
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
TEST CONDITION
IR = 10 μA (pulsed)
VR = 25 V
Pulse test tp < 300 μs, IF = 0.1 mA
Pulse test tp < 300 μs, IF = 1 mA
Pulse test tp < 300 μs, IF = 10mA
Pulse test tp < 300 μs, IF = 30 mA
Pulse test tp < 300 μs, IF = 100 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, IR = 10 mA, iR = 1 mA
SYMBOL
V(BR)
IR
VF
VF
VF
VF
VF
CD
trr
MIN.
30
TYP.
MAX.
0.2
2
240
320
400
500
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
Rev. 1.3, 16-Nov-2021
Document Number: 83403
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS85-M
www.vishay.com
Vishay Semiconductors
1000
200
VR = 30 V
180
IF - Forward Current (mA)
PR - Reverse Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
160
140
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
100
Tj = 25 °C
10
1
20
0.1
0
25
50
75
100
125
0
150
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
0.5
1.0
1.5
VF - Forward Voltage (V)
15824
Tj - Junction Temperature (°C)
15822
Fig. 3 - Forward Current vs. Forward Voltage
1000
10
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
Tj = 125 °C
VR = VRRM
100
10
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
1
25
15823
50
75
100
125
0.1
150
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
15825
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.3, 16-Nov-2021
Document Number: 83403
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS85-M
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
1.6 (0.063)
1.4 (0.055)
Cathode indentification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
2.5 (0.098) max.
1.25 (0.49) min.
2 (0.079) min.
Foot print recommendation:
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Rev. 1.3, 16-Nov-2021
Document Number: 83403
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000
