BAS86-GS18

BAS86 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring LINKS TO ADDITIONAL RESOURCES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications 3D 3D 3D Models • This diode is also available in a DO-35 case with type designation BAT86 MECHANICAL DATA Case: MiniMELF (SOD-80) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: APPLICATIONS GS18/10K per 13" reel (8 mm tape), 10K/box • Applications where a very low forward voltage is required GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS86 BAS86-GS18 or BAS86-GS08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Continuous reserve voltage TEST CONDITION VR 50 V Forward continuous current (1) IF 200 mA IFRM 500 mA Ptot 200 mW SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 °C Ambient operating temperature range Tamb -65 to +125 °C Storage temperature range Tstg -65 to +150 °C tp < 1 s, δ ≤ 0.5 Repetitive peak forward current (1) Power dissipation (1) UNIT Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.1, 16-Nov-2021 Document Number: 85511 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reserve breakdown voltage IR = 10 μA (pulsed) V(BR) 50 MAX. UNIT VR = 40 V IR 5 μA Pulse test tp < 300 μs, IF = 0.1 mA, δ < 2 % VF 200 300 mV Pulse test tp < 300 μs, IF = 1 mA, δ < 2 % VF 275 380 mV Pulse test tp < 300 μs, IF = 10 mA, δ < 2 % VF 365 450 mV Pulse test tp < 300 μs, IF = 30 mA, δ < 2 % VF 460 600 mV Pulse test tp < 300 μs, IF = 100 mA, δ < 2 % VF 700 900 mV VR = 1 V, f = 1 MHz CD 8 pF IF = 10 mA, IR = 10 mA, iR = 1 mA trr 5 ns Leakage current Forward voltage Diode capacitance Reserve recovery time TYP. V 1000 500 Tj = 125 °C VR = 50 V 450 400 350 300 250 PR - Limit at 100 % VR 200 150 100 PR - Limit at 80 % VR R thJA = 540 K/W IF - Forward Current (A) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Tj = 25 °C 10 1 50 0 25 0.1 50 75 100 125 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 9 C D - Diode Capacitance (pF) I R - Reverse Current (µA) 1.5 10 V R = V RRM 1000 100 15828 1.0 Fig. 3 - Forward Current vs. Forward Voltage 10000 10 1 25 0.5 V F - Forward Voltage (V) 15829 Tj - Junction Temperature (°C) 15827 0 150 7 6 5 4 3 2 1 0 50 75 100 125 150 Tj - Junction Temperature (°C) Fig. 2 - Reverse Current vs. Junction Temperature 15830 f = 1 MHz 8 0.1 1 10 100 V R - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.1, 16-Nov-2021 Document Number: 85511 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Rev. 2.1, 16-Nov-2021 Document Number: 85511 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024