BAT41-TAP

BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a MiniMELF case with type designation LL41 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES MECHANICAL DATA 3D 3D Case: DO-35 (DO-204AH) 3D Models Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT41 BAT41-TR or BAT41-TAP Single BAT41 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1) TEST CONDITION tp < 1 s, δ < 0.5 tp = 10 ms Tamb = 65 °C SYMBOL VRRM IF IFRM IFSM Ptot VALUE 100 100 350 750 200 UNIT V mA mA mA mW SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 -65 to +125 -65 to +150 °C °C °C Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION Valid provided that electrodes are kept at ambient temperature Junction temperature Ambient operating temperature range Storage temperature range Tamb Tstg ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse breakdown voltage (1) Leakage current (1) Forward voltage (1) Diode capacitance TEST CONDITION IR = 100 μA VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C IF = 1 mA IF = 200 mA VR = 1 V, f = 1 MHz SYMBOL V(BR) IR IR VF VF CD MIN. 100 TYP. 110 400 2 MAX. 100 20 450 1000 UNIT V nA μA mV mV pF Note (1) Pulse test, t = 300 μs p Rev. 1.9, 16-Nov-2021 Document Number: 85659 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT41 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 I F - Forward Current (mA) Ptot- Power Dissipation (mW) 250 200 150 100 50 T j = 125 ° C 10 1 - 40 °C 0.1 25 °C 0.01 0 0 50 100 Tamb - Ambient Temperature (°C) 20225 0 150 400 600 800 1000 1200 VF - Forward Voltage (mV) Fig. 3 - Typical Forward Characteristics 100000 5.0 Tj = 125 °C 4.5 CD - Diode Capacitance (pF) 10000 100 °C 75 °C 1000 50 °C 100 25 °C 10 1 200 18641 Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature IR - Reverse Leakage Current (nA) 100 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0 10 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) 20226 20227 Fig. 2 - Typical Reverse Characteristics 5 10 15 20 25 30 35 40 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 16-Nov-2021 Document Number: 85659 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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