BAT42W-E3-08

BAT42W, BAT43W www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • For general purpose applications • AEC-Q101 qualified available DESIGN SUPPORT TOOLS • Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912      Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box  08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE BAT42W BAT43W CIRCUIT CONFIGURATION TYPE MARKING Single L2 Single L3 BAT42W-E3-08 or BAT42W-E3-18 BAT42W-HE3-08 or BAT42W-HE3-18 BAT43W-E3-08 or BAT43W-E3-18 BAT43W-HE3-08 or BAT43W-HE3-18 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Repetitive peak reverse voltage VRRM 30 V Forward continuous current (1) IF 200 mA tp < 1 s,  < 0.5 IFRM 500 mA tp < 10 ms IFSM 4 A Tamb = 65 °C Ptot 200 mW SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -55 to +150 °C Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1) TEST CONDITION UNIT Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 23-Feb-18 Document Number: 85661 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT42W, BAT43W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 VR = 25 V IR Leakage current (1) Reverse recovery time MAX. UNIT 0.5 μA V IR 100 μA IF = 200 mA VF 1000 mV VF 400 mV 650 mV voltage (1) Diode capacitance TYP. VR = 25 V, Tj = 100 °C IF = 10 mA Forward PART BAT42W IF = 50 mA BAT42W VF IF = 2 mA BAT43W VF IF = 15 mA BAT43W VF 260 VR = 1 V, f = 1 MHz CD IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100  trr 330 mV 450 mV 7 pF 5 ns Note (1) Pulse test; t  300 μs, t /T < 0.02 p p  TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IR - Reverse Leackage Current (µA) Ptot - Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 150 100 50 °C 1 25 °C 0.1 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 50 Fig. 3 - Typical Reverse Characteristics 1000 14 100 125 °C - 40 °C 10 25 °C 1 0.1 CD - Diode Capacitance (pF) I F - Forward Current (mA) 75 °C 18444 Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature 12 10 8 6 4 2 0 0.01 0 18443 100 °C 10 200 Tamb - Ambient Temperature (°C) 18442 125 °C 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Fig. 2 - Typical Forward Characteristics 0 18445 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.9, 23-Feb-18 Document Number: 85661 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT42W, BAT43W www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.40 (0.055) 3.85 (0.152) 1.7 (0.067) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.9, 23-Feb-18 Document Number: 85661 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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