BAT54C-E3-08

BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available BAT54 • Base P/N-E3 - RoHS-compliant, commercial grade BAT54A • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified 3 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 2 1 MECHANICAL DATA 2 Case: SOT-23 BAT54C BAT54S 3 3 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box Top View 08/3K per 7" reel (8 mm tape), 15K/box 1 2 2 1 PARTS TABLE PART ORDERING CODE BAT54 BAT54A BAT54C BAT54S INTERNAL CONSTRUCTION TYPE MARKING Single diode L4 Dual diodes common anode L42 Dual diodes common cathode L43 Dual diodes serial L44 BAT54-E3-08 or BAT54-E3-18 BAT54-HE3-08 or BAT54-HE3-18 BAT54A-E3-08 or BAT54A-E3-18 BAT54A-HE3-08 or BAT54A-HE3-18 BAT54C-E3-08 or BAT54C-E3-18 BAT54C-HE3-08 or BAT54C-HE3-18 REMARKS Tape and reel BAT54S-E3-08 or BAT54S-E3-18 BAT54S-HE3-08 or BAT54S-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Repetitive peak reverse voltage TEST CONDITION VRRM 30 V Forward continuous current (1) IF 200 mA IFRM 300 mA IFSM 600 mA Ptot 230 mW Repetitive peak forward current (1) Surge forward current (1) tp < 1 s Power dissipation UNIT Note (1) Device on fiberglass substrate, see layout on next page THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature TEST CONDITION SYMBOL VALUE UNIT Device on fiberglass substrate, see layout on next page RthJA 430 K/W Tj 125 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +125 °C Rev. 1.9, 16-Mar-16 Document Number: 85508 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reserve breakdown voltage IR = 100 μA (pulsed) V(BR) 30 Leakage current Forward voltage Diode capacitance Reserve recovery time TYP. MAX. UNIT V Pulsed test tp < 300 μs, 