BAT54WS
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
BAT54WS
ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING
REMARKS
Single
L4
Tape and reel
BAT54WS-E3-08 or BAT54WS-E3-18
BAT54WS-HE3-08 or BAT54WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current
Surge forward current (1)
Power dissipation (1)
TEST CONDITION
(1)
tp < 1 s
SYMBOL
VRRM
IF
IFRM
IFSM
Ptot
VALUE
30
200
300
600
150
UNIT
V
mA
mA
mA
mW
VALUE
650
125
-65 to +150
-55 to +125
UNIT
K/W
°C
°C
°C
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
(1)
SYMBOL
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current (1)
Forward voltage (1)
Diode capacitance
Reserve recovery time
TEST CONDITION
Tested with 100 μA pulses
VR = 25 V
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
SYMBOL
V(BR)
IR
VF
VF
VF
VF
VF
CD
trr
MIN.
30
TYP.
MAX.
2
240
320
400
500
800
10
UNIT
V
μA
mV
mV
mV
mV
mV
pF
5
ns
Note
(1) Pulse test; t < 300 μs, θ < 2 %
p
Rev. 2.0, 01-Jun-17
Document Number: 85667
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54WS
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I F - Forward Current (mA)
1000
T j = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
0.2
18867
1.2
0.4 0.6 0.8
1
VF - Forward Voltage (V)
1.4
Fig. 1 - Typical Forward Current vs. Forward Voltage
vs. Various Temperatures
14
C D - Typical Capacitance (pF)
12
10
8
6
4
2
0
0
4
18868
12
16
20
24
8
VR - Reverse Voltage (V)
28
Fig. 2 - Typical Capacitance vs. Reverse Applied Voltage
1000
I R - Reverse Current (µA)
T j = 125 °C
100
100 °C
75 °C
10
50 °C
1
25 °C
0.1
0.01
0
18869
5
10
15
20
25
VR - Reverse Voltage (V)
30
Fig. 3 - Typical Reverse Current vs. Reverse Voltage
vs. Various Temperatures
Rev. 2.0, 01-Jun-17
Document Number: 85667
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54WS
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.15 [0.006]
0.10 [0.004]
0.2 [0.008]
0.8 [0.031]
1.15 [0.045]
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0° - 8°
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
2.50 [0.098]
1.1 [0.043]
0.20 [0.008]
0.40 [0.016]
2.85 [0.112]
1.5 [0.059]
1.60 [0.063]
Cathode bar
Footprint recommendation:
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
0.8 [0.031]
0.6 [0.024]
0.8 [0.031]
Rev. 2.0, 01-Jun-17
Document Number: 85667
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024