BAT81S, BAT82S, BAT83S
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
APPLICATIONS
•
•
•
•
•
•
•
3D 3D
3D Models
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
General purpose and switching Schottky barrier diode
HF-detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC/DC converter for notebooks
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
BAT81S
BAT82S
BAT83S
TYPE
DIFFERENTIATION
VR = 40 V
VR = 50 V
VR = 60 V
ORDERING CODE
BAT81S-TR or BAT81S-TAP
BAT82S-TR or BAT82S-TAP
BAT83S-TR or BAT83S-TAP
CIRCUIT
CONFIGURATION
Single
Single
Single
TYPE MARKING
REMARKS
BAT81S
BAT82S
BAT83S
Tape and reel/ammopack
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward continuous current
Peak forward surge current
Repetitive peak forward current
PART
BAT81S
BAT82S
BAT83S
SYMBOL
VR
VR
VR
IF
IFSM
IFRM
tp ≤ 10 ms
tp ≤ 1 s
VALUE
40
50
60
30
500
150
UNIT
V
V
V
mA
mA
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
I = 4 mm, TL = constant
SYMBOL
RthJA
Tj
Tstg
VALUE
320
125
-65 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
TEST CONDITION
IF = 0.1 mA
IF = 1 mA
IF = 15 mA
VR = VRmax.
VR = 1 V, f = 1 MHz
SYMBOL
VF
VF
VF
IR
CD
MIN.
TYP.
MAX.
330
410
1000
200
1.6
UNIT
mV
mV
mV
nA
pF
Rev. 2.1, 16-Nov-2021
Document Number: 85512
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT81S, BAT82S, BAT83S
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PR - Reverse Power Dissipation (mW)
14
1000
VR = 60 V
I F - Forward Current (mA)
12
RthJA = 540 K/W
10
8
6
Limit at
PPRR - Limit
at100
100%%VRVR
4
PR - Limit at 80 % VR
100
Tj = 125 °C
10
Tj = 25 °C
1
0.1
2
0.01
0
25
50
75
100
125
0
150
Tj - Junction Temperature (°C)
15794
1
1.5
2.0
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
2.0
CD - Diode Capacitance (pF)
V R = V RRM
I R - Reverse Current (µA)
0.5
V F - Forward Voltage (V)
15796
100
10
1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
25
50
75
100
125
0.1
150
15797
Tj - Junction Temperature (°C)
15795
Fig. 2 - Reverse Current vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 2.1, 16-Nov-2021
Document Number: 85512
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024