BAT86S-TAP

BAT86S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required MECHANICAL DATA LINKS TO ADDITIONAL RESOURCES Case: DO-35 (DO-204AH) 3D 3D Weight: approx. 125 mg 3D Models Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAT86S ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT86S-TR or BAT86S-TAP Single BAT86S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 50 V Reverse voltage Peak forward surge current Repetitive peak forward current tp ≤ 10 ms IFSM 5 A tp ≤ 1 s IFRM 500 mA IF 200 mA IFAV 200 mA Forward continuous current Average forward current PCB mounting, I = 4 mm; VRWM = 25 V, Tamb = 50 °C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION SYMBOL VALUE UNIT I = 4 mm, TL = constant RthJA 320 K/W Tj 125 °C Tstg -65 to +150 °C Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reserve current Diode capacitance TEST CONDITION SYMBOL MAX. UNIT IF = 0.1 mA VF MIN. TYP. 300 mV IF = 1 mA VF 380 mV IF = 10 mA VF 450 mV IF = 30 mA VF 600 mV IF = 100 mA VF 900 mV VR = 40 V IR 5 μA VR = 1 V, f = 1 MHz CD 8 pF Rev. 2.1, 16-Nov-2021 Document Number: 85514 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT86S www.vishay.com Vishay Semiconductors 1000 500 VR = 50 V 450 Tj = 125 °C 400 IF - Forward Current (A) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 350 300 250 PR - Limit at 100 % VR 200 150 100 PR - Limit at 80 % VR R thJA = 540 K/W 100 Tj = 25 °C 10 1 50 0.1 0 25 50 75 100 125 0 150 Tj - Junction Temperature (°C) 15827 1.0 1.5 V F - Forward Voltage (V) 15829 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Forward Current vs. Forward Voltage 10000 10 V R = V RRM 9 C D - Diode Capacitance (pF) I R - Reverse Current (µA) 0.5 1000 100 10 1 25 50 75 100 125 Tj - Junction Temperature (°C) 15828 7 6 5 4 3 2 1 0 150 f = 1 MHz 8 0.1 15830 Fig. 2 - Reverse Current vs. Junction Temperature 1 10 100 V R - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.1, 16-Nov-2021 Document Number: 85514 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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