BAV23C
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Vishay Semiconductors
Small Signal Switching Diode, Dual
FEATURES
• Silicon epitaxial planar diode
3
• Fast switching dual diode with common
cathode
• AEC-Q101 qualified available
1
• Base P/N-E3 - RoHS-compliant, commercial
grade
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
18108_1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV23C
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Common cathode
KT6
Tape and reel
SYMBOL
VALUE
UNIT
VR
200
V
VRRM
250
V
IFSM
9
A
BAV23C-E3-08 or BAV23C-E3-18
BAV23C-HE3-08 or BAV23C-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward current
t = 1 μs
Non-repetitive peak forward surge current
t=1s
IFSM
0.5
A
IF(AV)
200
mA
IF
400
mA
Repetitive peak forward current
IFRM
625
mA
Power dissipation (2)
Ptot
350
mW
SYMBOL
VALUE
UNIT
RthJA
357
K/W
Maximum average forward rectified current (1)
Forward continuous current (2)
Notes
(1) Measured under pulse conditions; pulse time = t 0.3 ms
p
(2) Device on fiberglass substrate
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Junction temperature
Note
(1) Device on fiberglass substrate
Rev. 1.5, 13-Feb-18
Document Number: 81902
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV23C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
TEST CONDITION
SYMBOL
MIN.
IR = 100 μA, tp = 300 ms
V(BR)
250
IF = 100 mA
VF
1
IF = 200 mA
VF
1.25
V
VR = 200 V
IR
100
nA
VR = 200 V, Tj = 150 °C
IR
100
μA
IF = 10 mA
rf
VR = 0 V, f = 1 MHz
CD
5
pF
IF = IR = 30 mA, RL = 100
iR = 3 mA
trr
50
ns
Forward voltage
Reverse current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
TYP.
MAX.
UNIT
V
V
5
500
450
400
Ptot (mW)
350
300
250
200
150
100
50
0
0
50
100
150
Tamb (°C)
Fig. 1 - Ptot - Admissible Power Dissipation vs. Ambient Temperature
100
IFSM (A)
10
1
Tj = 25 °C - prior to surge
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Test pulse tp (s)
Fig. 2 - IFSM - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses
Rev. 1.5, 13-Feb-18
Document Number: 81902
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV23C
www.vishay.com
Vishay Semiconductors
1.0E+0
100.0E-3
Tamb = 150 °C
10.0E-3
IF (A)
Tamb = 125 °C
Tamb = 100 °C
1.0E-3
Tamb = 75 °C
Tamb = 50 °C
100.0E-6
Tamb = 25 °C
10.0E-6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF (V)
Fig. 3 - VF - Typical Forward Current vs. Forward Voltage vs. Various Temperatures
1.00E-03
1.00E-04
Tamb = 150 °C
1.00E-05
Tamb = 125 °C
IR (A)
Tamb = 100 °C
1.00E-06
Tamb = 75 °C
Tamb = 50 °C
1.00E-07
Tamb = 25 °C
1.00E-08
1.00E-09
0
50
100
150
200
250
300
VR (V)
Fig. 4 - IR - Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures
Rev. 1.5, 13-Feb-18
Document Number: 81902
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV23C
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.5, 13-Feb-18
Document Number: 81902
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000
