BAV300, BAV301, BAV302, BAV303
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Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices
BAV100 to BAV103, BAV200 to BAV203
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
• General purposes
3D 3D
3D Models
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes / options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE DIFFERENTIATION
ORDERING CODE
CIRCUIT CONFIGURATION
REMARKS
VRRM = 60 V
BAV300-TR3 or BAV300-TR
Single
Tape and reel
BAV300
BAV301
VRRM = 120 V
BAV301-TR3 or BAV301-TR
Single
Tape and reel
BAV302
VRRM = 200 V
BAV302-TR3 or BAV302-TR
Single
Tape and reel
BAV303
VRRM = 250 V
BAV303-TR3 or BAV303-TR
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Reverse voltage
Forward continuous current
Peak forward surge current
Forward peak current
PART
SYMBOL
VALUE
UNIT
BAV300
BAV301
VRRM
60
V
VRRM
120
V
BAV302
VRRM
200
V
BAV303
VRRM
250
V
BAV300
VR
50
V
BAV301
VR
100
V
BAV302
VR
150
V
BAV303
VR
200
V
mA
IF
250
tp = 1 s, Tj = 25 °C
IFSM
1
A
f = 50 Hz
IFM
625
mA
Rev. 2.3, 26-Nov-2021
Document Number: 85545
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV300, BAV301, BAV302, BAV303
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
Mounted on epoxy-glass
hard tissue, fig. 4
35 μm copper clad, 0.9 mm2
copper area per electrode
RthJA
500
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Differential forward resistance
Reverse recovery time
TEST CONDITION
PART
IF = 100 mA
SYMBOL
MIN.
TYP.
MAX.
UNIT
VF
1
V
VR = 50 V
BAV300
IR
100
nA
VR = 100 V
BAV301
IR
100
nA
VR = 150 V
BAV302
IR
100
nA
VR = 200 V
BAV303
IR
100
nA
Tj = 100 °C, VR = 50 V
BAV300
IR
15
μA
Tj = 100 °C, VR = 100 V
BAV301
IR
15
μA
Tj = 100 °C, VR = 150 V
BAV302
IR
15
μA
Tj = 100 °C, VR = 200 V
BAV303
IR
15
μA
BAV300
V(BR)
60
V
BAV301
V(BR)
120
V
BAV302
V(BR)
200
V
BAV303
V(BR)
250
V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
VR = 0 V, f = 1 MHz
CD
1.5
pF
IF = 10 mA
rf
5
Ω
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
trr
50
ns
Rev. 2.3, 26-Nov-2021
Document Number: 85545
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV300, BAV301, BAV302, BAV303
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
1.3
1.27
0.152
Scattering Limit
9.9
10
0.355
25
1
VR = VRRM
0.1
10
I R - Reverse Current (µA)
0.71
0.01
2.5
0
40
80
120
160
200
95 10329
Tj - Junction Temperature (°C)
94 9084
Fig. 1 - Reverse Current vs. Junction Temperature
24
Fig. 4 - Board for RthJA Definition (in mm)
I F - Forward Current (mA)
1000
Tj = 25 °C
100
Scattering Limit
10
1
0.1
0
94 9085
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
rf - Differential Forward Resistance (Ω)
Fig. 2 - Forward Current vs. Forward Voltage
1000
100
Tj = 25 °C
10
1
0.1
94 9089
1
10
100
I F - Forward Current (mA)
Fig. 3 - Differential Forward Resistance vs. Forward Current
Rev. 2.3, 26-Nov-2021
Document Number: 85545
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV300, BAV301, BAV302, BAV303
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
0.6 (0.024)
*
1.1 (0.043)
1.2 (0.047)
<
1.
3
surface plan
gl
1 (0.039)
5
(
as 0.0
s 53
)
surface plan
Cathode indification
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
2 (0.079)
1.8 (0.071)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
Wave soldering
2.4 (0.094)
2.8 (0.110)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
1.4 (0.055)
1.2 (0.047)
0.8 (0.031)
Reflow soldering
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Rev. 2.3, 26-Nov-2021
Document Number: 85545
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000