BAW56
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diode, Dual
FEATURES
• Silicon epitaxial planar diode
3
• Fast switching dual diode with common anode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
2
1
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAW56
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Common anode
JD
Tape and reel
SYMBOL
VALUE
UNIT
VR = VRRM
70
V
BAW56-E3-08 or BAW56-E3-18
BAW56-HE3-08 or BAW56-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
Forward continuous current
IF
250
mA
tp = 1 μs
IFSM
2
A
tp = 1 ms
IFSM
1
A
tp = 1 s
IFSM
0.5
A
Ptot
350
mW
SYMBOL
VALUE
UNIT
RthJA
430
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Non repetitive peak forward current
Power dissipation (1)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
TEST CONDITION
Note
(1) Device on fiberglass substrate, see layout
Rev. 2.1, 13-Feb-18
Document Number: 85549
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAW56
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 1 mA
VF
0.715
V
IF = 10 mA
VF
0.855
V
IF = 50 mA
VF
1
V
IF = 150 mA
VF
1.25
V
Forward voltage
MIN.
TYP.
VR = 70 V
IR
2500
nA
VR = 70 V, Tj = 150 °C
IR
100
μA
VR = 25 V, Tj = 150 °C
IR
30
μA
Diode capacitance
VF = VR = 0 V, f = 1 MHz
CD
2
pF
Reverse recovery time
IF = 10 mA to iR = 1 mA,
VR = 6 V, RL = 100
trr
6
ns
Reverse current
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
IF - Forward Current (mA)
1000
102
D = 0.005
0.01
0.02
0.05
0.1
0.2
100
101
Tj = 100 °C
/
FM
10
25 °C
100
1
10-1
0.1
tp
D=
0.01
0
14356
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10-2
10-6
22290
10
-5
-4
10
tp
T
10
T
-3
-2
10-1 s 10-0
10
t
Fig. 2 - Peak Forward Current IFM = f (tp)
Rev. 2.1, 13-Feb-18
Document Number: 85549
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAW56
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 2.1, 13-Feb-18
Document Number: 85549
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000
