BP104, BP104S
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
948386_1
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BP104 is a PIN photodiode with high speed and high radiant
sensitivity in miniature, flat, top view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
BP104S is packed in tubes, specifications like BP104.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
Ira (μA)
ϕ (deg)
λ0.5 (nm)
BP104
45
± 65
870 to 1050
BP104S
45
± 65
870 to 1050
PACKAGE FORM
COMPONENT
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
BP104
Bulk
MOQ: 3000 pcs, 3000 pcs/bulk
Top view
BP104S
Tube
MOQ: 1800 pcs, 45 pcs/tube
Top view
ORDERING CODE
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 1.6, 24-Aug-11
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
t≤3s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Storage temperature range
Soldering temperature
SYMBOL
Document Number: 81500
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BP104, BP104S
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
VR = 10 V, E = 0
Reverse dark current
Diode capacitance
Open circuit Voltage
TYP.
MAX.
UNIT
Iro
2
30
nA
40
pF
V
VR= 0 V, f = 1 MHz, E = 0
CD
70
VR= 3 V, f = 1 MHz, E = 0
CD
25
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
λ = 950 nm
Ik
38
μA
45
μA
mW/cm2,
Short circuit current
Ee = 1
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
40
Ira
pF
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Range of spectral bandwidth
Noise equivalent power
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Ira - Reverse Light Current (µA)
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
40
60
Tamb - Ambient Temperature (°C)
94 8403
VR = 5 V
λ = 950 nm
1
94 8414
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0.1
10
1
E e - Irradiance (mW/cm²)
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
100
I ra - Reverse Light Current (µA)
I ra rel - Relative Reverse Light Current
10
0.1
0.01
100
80
100
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
1 mW/cm2
0.5 mW/cm2
λ = 950 nm
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
0.6
1
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.6, 24-Aug-11
0.1
94 8415
1
10
100
V R - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Document Number: 81500
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BP104, BP104S
www.vishay.com
Vishay Semiconductors
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
1
10
100
VR - Reverse Voltage (V)
948407
S (λ)rel - Relative Spectral Sensitivity
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1150
1050
λ - Wavelength (nm)
94 8408
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Srel - Relative Radiant Sensitivity
30°
80°
0.6
0.4
0.2
0
94 8406
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.6, 24-Aug-11
Document Number: 81500
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BP104, BP104S
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
96 12186
TUBE PACKAGING DIMENSIONS in millimeters
10.7
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
9.5
214.5
Stopper
18800
Fig. 8 - Drawing Proportions not scaled
Rev. 1.6, 24-Aug-11
Document Number: 81500
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024
