BPV10NF

BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High sensitivity • Daylight blocking filter matched with 850 nm to 950 nm emitters • Fast response times 16140-1 • Angle of half sensitivity: . = ± 20° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION BPV10NF is a PIN photodiode with high speed and high sensitivity in black, T-1¾ plastic package with daylight blocking filter. Filter bandwidth is matched with 850 nm to 950 nm IR emitters. APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (μA) at Ee = 1.0 mW/cm2, λ = 940 nm, VR = 5.0 V ϕ (°) λ0.5 (nm) 60 ± 20 780 to 1050 BPV10NF Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV10NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPV10NF-CS21 Reel MOQ: 5000 pcs, 1000 pcs/reel T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction to ambient Rev. 2.1, 26-Jul-2021 SYMBOL VALUE UNIT VR 60 V PV 215 mW Tj 100 °C Tamb -40 to +100 °C °C Tstg -40 to +100 t ≤ 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Document Number: 81503 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 0.85 1.3 V IR = 100 μA, E = 0 V(BR) 60 - - V VR = 20 V, E = 0 Iro - 0.1 5 nA VR = 0 V, f = 1 MHz, E = 0 CD - 11 - pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Ee = 1 λ = 850 nm VO - 410 - mV Short circuit current Ee = 1 mW/cm2, λ = 870 nm IK - 50 - μA Ira - 55 - μA Reverse light current mW/cm2, Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ee = 1 mW/cm2, λ = 940 nm, VR = 5 V Ira 30 60 - μA Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V TKIra - -0.1 - %/K Absolute spectral sensitivity VR = 5 V, λ = 870 nm s(λ) - 0.55 - A/W Angle of half sensitivity ϕ - ± 20 - ° Wavelength of peak sensitivity λp - 940 - nm λ0.5 - 780 to 1050 - nm η - 70 - % - 3x 10-14 - W/√Hz 3x 1012 Range of spectral bandwidth λ = 950 nm Quantum efficiency Noise equivalent power VR = 20 V, λ = 950 nm Detectivity VR = 20 V, λ = 950 nm D - - cm√Hz/W Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 80 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 60 - ns NEP BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 10000 1000 1 100 0.1 0.01 10 20 40 60 80 100 100 1000 80 1st line 2nd line 100 1st line 2nd line 2nd line Iro - Reverse Dark Current (nA) VR = 20 V 10 10000 120 2nd line Ira rel. - Relative Reverse Light Current (%) 1000 60 100 40 VR = 5 V, Ee = 1 mW/cm2, O = 940 nm 20 10 0 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 2.1, 26-Jul-2021 Document Number: 81503 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors Axis Title Axis Title 10000 100 100 1 10 0.1 0.01 0.1 10000 90 80 70 1000 60 1st line 2nd line 1000 10 1st line 2nd line 50 40 100 30 20 10 0 1 400 500 600 800 900 10 1000 1100 Ee - Irradiance (mW/cm2) λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Axis Title 100 1 Axis0° Title 10° 10000 mW/cm2 20° 10000 30° 10 0.2 mW/cm2 1000 0.1 mW/cm2 0.05 mW/cm2 1 0.02 mW/cm2 100 λ = 950 nm 2nd line Srel. - Relative Sensitivity 0.5 mW/cm2 1st line 2nd line 2nd line Ira - Reverse Light Current (μA) 700 1000 40° 1.0 0.9 50° 0.8 100 60° 70° 0.7 φ - Angular Displacement 2nd line 2nd line Ira - Reverse Light Current (μA) VR = 5 V, λ = 940 nm 2nd line Srel. - Relative Spectral Sensitivity (%) 100 80° 10 0.1 0.1 1 10 10 100 0.6 0.4 0.2 0 VR - Reverse Voltage (V) 1st line Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Sensitivity vs. Angular Displacement Axis Title 10000 12 f = 1 MHz 1000 8 1st line 2nd line 2nd line Cp - Capacitance (pF) 10 6 100 4 2 10 0 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 2.1, 26-Jul-2021 Document Number: 81503 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10NF www.vishay.com Vishay Semiconductors 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters A (4.4) chip position C R2.45 (sphere) 0.8 - 0.1 + 0.2 0.63 - 0.1 < 0.7 7.6 ± 0.15 8.6 ± 0.3 + 0.2 + 0.2 1 - 0.1 1.5 ± 0.25 11.9 ± 0.3 34.9 ± 0.5 Ø 5 ± 0.15 Area not plane 0.5 +0.15 Technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5185.01-4 Issue: 2; 11.04.2008 Rev. 2.1, 26-Jul-2021 Document Number: 81503 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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