BPV21F(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV21F(L) is a high speed and high sensitive PIN
photodiode in a plasic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
948387
Features
Applications
Large radiant sensitive area (A = 5.7 mm2)
Wide viewing angle ϕ = ± 65°
Fast response times
e4
Low junction capacitance
TO-92 plastic package with IR filter
Filter designed for 950 nm transmission
Option "L" long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
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•
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Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
VR
60
V
PV
215
mW
Reverse Voltage
Power Dissipation
Tamb ≤ 25 °C
Unit
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Junction Temperature
Soldering Temperature
t≤5s
Thermal Resistance Junction/
Ambient
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Max
Unit
1
1.3
V
2
30
nA
Forward Voltage
Breakdown Voltage
IR = 100 μA, E = 0
Reverse Dark Current
VR = 10 V, E = 0
Iro
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
48
pF
Serial Resistance
VR = 12 V, f = 1 MHz
RS
900
Ω
Document Number 81507
Rev. 1.6, 13-Nov-06
VF
Typ.
IF = 50 mA
V(BR)
60
V
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BPV21F(L)
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
mW/cm2,
λ = 950 nm
Symbol
Vo
Min
Typ.
Max
Unit
Open Circuit Voltage
Ee = 1
380
mV
Temp. Coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short Circuit Current
Ee = 1 mW/cm2, λ = 950 nm
Ik
35
μA
Reverse Light Current
Ee = 1 mW/cm , λ = 950 nm,
VR = 5 V
Ira
38
μA
Temp. Coefficient of Ira
Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
TKIra
0.1
%/K
Absolute Spectral Sensitivity
VR = 5 V, λ = 870 nm
s(λ)
0.35
A/W
VR = 5 V, λ = 950 nm
2
27
s(λ)
0.6
A/W
Angle of Half Sensitivity
ϕ
± 65
deg
Wavelength of Peak Sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
η
90
%
Range of Spectral Bandwidth
Quantum Efficiency
λ = 950 nm
Noise Equivalent Power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
Detectivity
VR = 10 V, λ = 950 nm
D*
5 x 1012
cm√Hz/W
Rise Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
70
ns
Fall Time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
70
ns
VR = 12 V, RL = 1 kΩ, λ = 870 nm
fc
4
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
fc
1
MHz
Cut-Off Frequency
Typical Characteristics
Tamb = 25 °C unless otherwise specified
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
2
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
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1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Document Number 81507
Rev. 1.6, 13-Nov-06
BPV21F(L)
Vishay Semiconductors
S ( ) rel - Relative Spectral Sensitivity
Ira - Reverse Light Current (µA)
1000
100
10
1
VR = 5 V
λ = 950 nm
0.1
0.01
94 8421
Ira – Reverse Light Current (μA)
1.0
0.8
0.6
0.4
0.2
0
750
10
0.1
1
Ee - Irradiance (mW/cm 2 )
850
1150
1050
950
- Wavelength (nm)
94 8408
Figure 3. Reverse Light Current vs. Irradiance
100
1.2
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
λ = 950 nm
2
Srel - Relative Sensitivity
1 mW/cm
0.5 mW/cm2
10
0.2 mW/cm2
2
0.1 mW/cm
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1
0.1
1
10
100
V R – Reverse Voltage (V)
94 8422
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8406
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
CD – Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
94 8423
1
10
100
V R – Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81507
Rev. 1.6, 13-Nov-06
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BPV21F(L)
Vishay Semiconductors
Package Dimensions in mm
9612202
Package Dimensions in mm
9612207
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Document Number 81507
Rev. 1.6, 13-Nov-06
BPV21F(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81507
Rev. 1.6, 13-Nov-06
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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