BPW16N

BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 40° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 8638 Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION APPLICATIONS BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW16N Ica (mA) ϕ (deg) λ0.1 (nm) 0.14 ± 40 450 to 1040 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW16N Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 5 V PARAMETER TEST CONDITION IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 55 °C PV 100 mW Tj 100 °C Tamb - 40 to + 100 °C °C Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Tstg - 40 to + 100 t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 24-Aug-11 UNIT Document Number: 81515 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW16N www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 20 94 8308 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYP. MAX. UNIT ICEO 1 200 nA VCE = 5 V, f = 1 MHz, E = 0 CCEO 8 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 0.14 mA ± 40 deg λp 825 nm λ0.1 450 to 1040 nm PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 32 VCE = 20 V, E = 0 Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current V 0.07 ϕ Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.01 mA 0.3 VCEsat V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 4.8 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5.0 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 120 kHz μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 0 20 94 8235 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Collector Dark Current vs. Ambient Temperature Rev. 1.8, 24-Aug-11 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Collector Current vs. Ambient Temperature Document Number: 81515 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW16N www.vishay.com Vishay Semiconductors 12 ton / toff -Turn on / Turn off Time (µs) 0.1 V CE = 5 V λ= 950 nm 0.01 0.001 0.01 1 toff 2 ton Ee =1 mW/cm2 0.5 mW/cm2 0.1 0.2 mW/cm2 1 10 0 8 16 12 1.0 0.8 0.6 0.4 0.2 0 400 100 V CE - Collector Emitter Voltage (V) 4 I C - Collector Current (mA) Fig. 6 - Turn-on/Turn-off Time vs. Collector Current S ( λ)rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) λ = 950 nm 600 800 1000 λ - Wavelength (nm) 94 8241 Fig. 4 - Collector Light Current vs. Collector Emitter Voltage Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° Srel - Relative Radiant Sensitivity CCEO - Collector Emitter Capacitance (pF) 4 94 8238 1 94 8237 6 10 Fig. 3 - Collector Light Current vs. Irradiance 0.01 0.1 8 0 0.1 E e - Irradiance (mW/cm2) 94 8236 V CE = 5 V RL = 100 Ω λ = 950 nm 10 f = 1 MHz 16 12 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ica - Collector Light Current (mA) 1 80° 0 0.1 94 8240 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage Rev. 1.8, 24-Aug-11 0.6 0.4 0.2 0 94 8312 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81515 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW16N www.vishay.com Vishay Semiconductors 2.4 ± 0.15 PACKAGE DIMENSIONS in millimeters R 1.65 E 3.3 C ± 0.15 ± 0.3 ± 0.1 2.2 0.8 (1.3) Ø 1.8 ± 0.1 ± 0.3 Area not plane + 0.2 - 0.1 1.5 0.5 ± 0.25 2.7 29.1 ± 0.5 Chip position 0.4 + 0.15 technical drawings according to DIN specifications 2.54 nom. 6.544-5047.01-4 Issue: 2; 19.12.00 96 12188 Rev. 1.8, 24-Aug-11 Document Number: 81515 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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