BPW24R

BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 948642 • Fast response times • Angle of half sensitivity:  = ± 12° • Hermetically sealed package DESCRIPTION • Cathode connected to package BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. • Central chip alignment • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira ( A)  (deg) 0.1 (nm) 60 ± 12 400 to 1100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 BPW24R Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW24R Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb  25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.6, 11-Aug-11 SYMBOL VALUE VR 60 UNIT V PV 210 mW Tj 125 °C Tamb - 40 to + 125 °C °C Tstg - 40 to + 125 t5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W 1 Document Number: 81520 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW24R www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 200 Reverse dark current MAX. UNIT V VR = 50 V, E = 0 Iro 2 VR = 0 V, f = 1 MHz, E = 0 CD 11 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.8 pF VR = 20 V, f = 1 MHz, E = 0 CD 2.5 pF Ee = 1 mW/cm2,  = 950 nm Vo 450 mV Temperature coefficient of Vo Ee = 1 mW/cm2,  = 950 nm TKVo -2 mV/K Short circuit current Ee = 1 mW/cm2,  = 950 nm Ik 55 μA EA = 1 klx TKIk 0.1 %/K Ee = 1 mW/cm2,  = 950 nm, VR = 20 V Ira 60 μA VR = 5 V,  = 870 nm s() 0.60 A/W VR = 5 V,  = 900 nm s() 0.55 A/W Angle of half sensitivity  ± 12 deg Wavelength of peak sensitivity p 900 Diode capacitance Open circuit voltage Temperature coefficient of Ik Reverse light current Absolute Spectral Sensitivity 45 0.1 Range of spectral bandwidth 10 nA nm 400 1100 nm Rise time VR = 20 V, RL = 50 ,  = 820 nm tr 7 ns Fall time VR = 20 V, RL = 50 ,  = 820 nm tf 7 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 10 4 V R = 50 V 10 3 10 2 10 1 10 0 20 94 8454 40 60 80 100 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 120 0 Tamb - Ambient Temperature (°C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.6, 11-Aug-11 1.4 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature 2 Document Number: 81520 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW24R www.vishay.com Vishay Semiconductors S (λ)rel - Relative Spectral Sensitivity 100 10 V R = 10 V λ = 950 nm 1 0.1 0.01 0.1 Ee - Irradiance (mW/cm2) 94 8455 0.4 0.2 550 750 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 10 1150 950 λ - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 0.6 94 8458 Fig. 3 - Reverse Light Current vs. Irradiance 100 0.8 0 350 10 1 1.0 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 100 10 0.6 VR - Reverse Voltage (V) 94 8456 0.4 0.2 0 94 8459 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.6, 11-Aug-11 3 Document Number: 81520 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW24R www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C ± 0.15 A ± 0.25 + 0.02 - 0.07 6.15 Ø 4.69 5.5 2.54 nom. 13.2 ± 0.7 (2.5) Chip position Ø 0.45 +0.02 -0.05 ± 0.05 technical drawings according to DIN specifications 4 Lens Drawing-No.: 6.503-5022.02-4 Issue: 1; 24.08.98 14487 Rev. 1.6, 11-Aug-11 4 Document Number: 81520 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000