BPW41N

BPW41N www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times 94 8480 • Angle of half sensitivity: ϕ = ± 65° • Compliant to RoHS Directive to 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) 45 ± 65 870 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPW41N Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW41N Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 1.6, 23-Aug-11 VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature SYMBOL Document Number: 81522 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW41N www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 MAX. UNIT V VR = 10 V, E = 0 Iro 2 VR= 0 V, f = 1 MHz, E = 0 CD 70 VR= 3 V, f = 1 MHz, E = 0 CD 25 Reverse dark current Diode capacitance TYP. 30 nA 40 pF pF Open circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 38 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V 45 μA 43 Ira Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 950 nm λ0.5 870 to 1050 nm VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power 100 1.4 VR = 5 V λ = 950 nm 1.2 1 mW/cm2 I ra - Reverse Light Current (µA) I ra rel - Relative Reverse Light Current BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.0 0.8 0.5 mW/cm2 λ = 950 nm 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.6 0 94 8409 20 40 60 80 0.1 100 Tamb - Ambient Temperature (°C) 94 8415 Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature CD - Diode Capacitance (pF) 10 VR = 5 V λ = 950 nm 1 94 8414 0.1 1 10 E e - Irradiance (mW/cm²) Fig. 2 - Reverse Light Current vs. Irradiance Rev. 1.6, 23-Aug-11 10 100 80 100 0.1 0.01 1 V R - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Reverse Voltage 1000 Ira - Reverse Light Current (µA) 0.2 mW/cm2 10 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Document Number: 81522 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW41N www.vishay.com Vishay Semiconductors 10° 20° 1.0 0.8 0.6 0.4 0.2 0 750 850 950 0.9 50° 0.8 60° 70° 0.7 80° 0.6 1150 1050 λ - Wavelength (nm) 94 8408 40° 1.0 ϕ - Angular Displacement 30° Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 1.2 0.4 0.2 0 94 8406 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters ± 0.2 4 ± 0.2 5 C 6.8 < 0.5 ± 0.3 Chip position (2.05) 19.8 - 0.8 8.9 ± 0.3 Sensitive area (2.8) A Area not plane < 0.65 0.45 + 0.01 - 0.05 2.5 nom. Drawing-No.: 6.544-5108.01-4 2.3 0.4 ± 0.2 + 0.1 - 0.05 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12195 Rev. 1.6, 23-Aug-11 Document Number: 81522 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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