BPW76A

BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 8401 • Angle of half sensitivity: ϕ = ± 40° • Base terminal connected • Hermetically sealed package DESCRIPTION • Flat glass window BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and flat glass window. It is sensitive to visible and near infrared radiation. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) BPW76A 0.4 to 0.8 ± 40 450 to 1080 BPW76B > 0.6 ± 40 450 to 1080 PACKAGING REMARKS PACKAGE FORM TO-18 TO-18 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW76A Bulk MOQ: 1000 pcs, 1000 pcs/bulk BPW76B Bulk MOQ: 1000 pcs, 1000 pcs/bulk Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector base voltage TEST CONDITION VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V IC 50 mA Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Total power dissipation Tamb ≤ 25 °C PV 250 mW Tj 125 °C Operating temperature range Tamb - 40 to + 125 °C Storage temperature range Tstg - 40 to + 125 °C Tsd 260 °C RthJA 400 K/W RthJC 150 K/W Junction temperature t≤5s Soldering temperature Thermal resistance junction/ambient Thermal resistance junction/gase Connected with Cu wire, 0.14 mm2 Note Tamb = 25 °C, unless otherwise specified www.vishay.com 398 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526 Rev. 1.4, 08-Sep-08 BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Ptot - Total Power Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 75 125 100 150 Tamb - Ambient Temperature (°C) 94 8342 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 Collector emitter breakdown voltage TYP. MAX. UNIT 1 100 nA V CCEO 6 pF Angle of half sensitivity ϕ ± 40 deg Wavelength of peak sensitivity λp 850 nm λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz Range of spectral bandwidth Collector emitter saturation voltage 0.3 V µs Note Tamb = 25 °C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current TEST CONDITION PART SYMBOL MIN. Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V BPW76A Ica 0.4 BPW76B Ica 0.6 TYP. MAX. 0.8 UNIT mA mA BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.50 I ca rel - Relative Collector Current I CEO - Collector Dark Current (nA) 10 6 10 5 10 4 10 3 10 2 V CE = 20 V E=0 10 1 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 10 0 20 94 8343 VCE = 5V E e = 1 mW/cm2 λ = 950 nm 2.25 50 100 150 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81526 Rev. 1.4, 08-Sep-08 0 94 8344 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 399 BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 12 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 10 1 0.1 VCE = 5 V λ = 950 nm 0.01 0.001 0.01 1 Ee - Irradiance 94 8345 (mW/cm2) mW/cm2 0.2 mW/cm2 0.1 0.1 mW/cm2 0.05 mW/cm2 1 10 0 4 V CE - Collector Emitter Voltage (V) 12 8 16 IC - Collector Current (mA) 1.0 0.8 0.6 0.4 0.2 0 100 400 600 800 1000 λ - Wavelength (nm) 94 8348 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° f = 1 MHz 16 Srel - Relative Sensitivity CCEO - Collector Ermitter Capacitance (pF) toff 2 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S (λ)rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 0.5 94 8346 ton 4 94 8253 E e = 1 mW/cm2 BPW76A λ = 950 nm 0.01 0.1 6 10 Fig. 4 - Collector Light Current vs. Irradiance 1 8 0 0.1 VCE = 5 V RL = 100 Ω λ = 950 nm 10 12 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0.1 94 8247 1 10 100 VCE - Collector Ermitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.com 400 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8347 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526 Rev. 1.4, 08-Sep-08 BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors ± 0.15 PACKAGE DIMENSIONS in millimeters 5.5 2.54 nom. B E + 0.05 - 0.1 5.2 ± 0.25 Ø 4.7 C 13.2 ± 0.7 (2.5) Chip position 0.45 + 0.02 - 0.05 3.9 Lens ± 0.05 technical drawings according to DIN specifications Drawing-No.: 6.503-5004.01-4 Issue:1; 01.07.96 96 12175 Document Number: 81526 Rev. 1.4, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 401 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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