BPW85

BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 25° 20815 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) BPW85 0.8 to 8 ± 25 450 to 1080 BPW85A 0.8 to 2.5 ± 25 450 to 1080 BPW85B 1.5 to 4 ± 25 450 to 1080 BPW85C 3 to 8 ± 25 450 to 1080 PACKAGE FORM Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS BPW85 ORDERING CODE Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85A Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85B Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 BPW85C Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V Collector current Collector peak current Power dissipation IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 55 °C PV 100 mW Tj 100 °C Tamb -40 to +100 °C °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 2.1, 04-Aug-14 UNIT Tstg -40 to +100 t ≤ 3 s, 2 mm from case Tsd 260 °C Connected with Cu wire Ø 0.14 mm2 RthJA 450 K/W Document Number: 81531 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 100 80 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF ϕ ± 25 deg Collector emitter breakdown voltage Angle of half sensitivity TYP. MAX. UNIT 1 200 nA V Wavelength of peak sensitivity λp 850 nm Range of spectral bandwidth λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat VS = 5 V, IC = 5 mA, RL = 100 Ω ton Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz Collector emitter saturation voltage Turn-on time 0.3 2.0 V μs TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current Rev. 2.1, 04-Aug-14 TEST CONDITION Ee = 1 λ = 950 nm, VCE = 5 V mW/cm2, PART SYMBOL MIN. MAX. UNIT BPW85 Ica 0.8 TYP. 8.0 mA BPW85A Ica 0.8 2.5 mA BPW85B Ica 1.5 4.0 mA BPW85C Ica 3.0 8.0 mA Document Number: 81531 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Ica - Collector Light Current (mA) ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 20 40 60 80 0.2 mW/cm2 0.1 mW/cm2 0.1 94 8275 Fig. 2 - Collector Dark Current vs. Ambient Temperature 100 1 10 VCE - Collector Emitter Voltage (V) 10 Ica - Collector Light Current (mA) Ica rel - Relative Collector Current 0.05 mW/cm2 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Ica - Collector Light Current (mA) BPW85C BPW85A 0.1 VCE = 5 V λ = 950 nm 0.1 1 Ee - Irradiance (mW/cm2) Fig. 4 - Collector Light Current vs. Irradiance Rev. 2.1, 04-Aug-14 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 λ = 950 nm 1 10 VCE - Collector Emitter Voltage (V) 100 10 BPW85B 94 8271 1 Fig. 6 - Collector Light Current vs. Collector Emitter Voltage 10 0.01 0.01 Ee = 1 mW/cm2 0.5 mW/cm2 94 8276 Fig. 3 - Relative Collector Current vs. Ambient Temperature 1 BPW 85 B 0.01 0.1 0.6 Ica - Collector Light Current (mA) E e = 1 mW/cm2 0.5 mW/cm2 1 0.01 0.1 100 Tamb - Ambient Temperature (°C) 94 8304 BPW 85 A = 950 nm λ 10 E e = 1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 0.01 0.1 94 8277 BPW 85 C λ = 950 nm 100 1 10 VCE - Collector Emitter Voltage (V) Fig. 7 - Collector Light Current vs. Collector Emitter Voltage Document Number: 81531 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW85, BPW85A, BPW85B, BPW85C Vishay Semiconductors 10 S (λ)rel - Relative Spectral Sensitivity f = 1 MHz 8 6 4 2 0 0.1 1 0.8 0.6 0.4 0.2 0 400 100 10 600 1000 Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage 0° 8 10° 20° 30° Srel - Relative Radiant Sensitivity ton/toff - Turn-on/Turn-off Time (µs) 800 λ - Wavelength (nm) 94 8348 VCE - Collector Emitter Voltage (V) 94 8294 1.0 VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement CCEO - Collector Emitter Capacitance (pF) www.vishay.com 80° 0 0 94 8293 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 9 - Turn-on/Turn-off Time vs. Collector Current Rev. 2.1, 04-Aug-14 0.6 0.4 0.2 0 94 8295 Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81531 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Ø 3.2 ± 0.15 PACKAGE DIMENSIONS in millimeters E C (2.5) 3.4 ± 0.1 5 .4 < 0.6 R1 (p 34.4 ± 0.5 AREA NOT PLANE + 0.2 2.54 nom. Drawing-No.: 6.544-5054.01-4 Issue: 5; 28.07.14 1.5 ± 0:5 1.05 ± 0.1 0.5 - 0.1 Rev. 2.1, 04-Aug-14 ) re he 7 ± 0.3 4.4 ± 0.1 Ø 3 ± 0.1 0.4 ± 0.05 technical drawings according to DIN specifications Document Number: 81531 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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