BPW96C

BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8391 • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.1 (nm) BPW96B 2.5 to 7.5 ± 20 450 to 1080 BPW96C 4.5 to 15 ± 20 450 to 1080 PACKAGING REMARKS PACKAGE FORM BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ COMPONENT Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V Collector current UNIT IC 50 mA tp/T ≤ 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 47 °C PV 150 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Collector peak current Power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 23-Aug-11 Document Number: 81532 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF ϕ ± 20 deg PARAMETER Collector emitter breakdown voltage Angle of half sensitivity TYP. MAX. UNIT 1 200 nA V Wavelength of peak sensitivity λp 850 nm Range of spectral bandwidth λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz Collector emitter saturation voltage 0.3 2.0 V μs TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current Rev. 1.8, 23-Aug-11 TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V BPW96B Ica 2.5 4.5 7.5 mA BPW96C Ica 4.5 8 15 mA Document Number: 81532 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 20 40 60 Ica rel - Relative Collector Current 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 1 100 10 V CE - Collector Emitter Voltage (V) 10 8 f = 1 MHz 6 4 2 0 0.1 1 100 10 V CE - Collector Emitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) λ = 950 nm 8 BPW96B BPW96C 1 0.1 V CE = 5 V λ = 950 nm VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 0.1 1 10 Ee - Irradiance (mW/cm2) Fig. 3 - Collector Light Current vs. Irradiance Rev. 1.8, 23-Aug-11 0.05 mW/cm² Fig. 4 - Collector Light Current vs. Collector Emitter Voltage 10 94 8296 0.1 mW/cm² 94 8301 Fig. 2 - Relative Collector Current vs. Ambient Temperature 0.01 0.01 0.2 mW/cm² 1 94 8297 Fig. 1 - Collector Dark Current vs. Ambient Temperature 1.6 0.5 mW/cm² 0.1 0.1 100 80 Tamb - Ambient Temperature (°C) 94 8304 Ee = 1 mW/cm² BPW96B C CEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 0 94 8293 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 6 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81532 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1.0 Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 1000 0.6 λ - Wavelength (nm) 94 8348 0.4 0.2 0 94 8299 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C E Chip position ± 0.15 (4.8) Ø5 ± 0.15 7.6 ± 0.3 2.4 0.8 Area not plane + 0.2 - 0.1 0.5 1.5 ± 0.25 1 + 0.2 - 0.1 < 0.7 35.3 ± 0.5 8.6 ± 0.3 R 12.3 re) he sp 5( 0.63 + 0.15 + 0.2 - 0.1 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5086.01-4 Issue:1; 01.07.96 96 12192 Rev. 1.8, 23-Aug-11 Document Number: 81532 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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