BRT11-H

BRT11/ 12/ 13 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output Features • ITRMS = 300 mA • High Static dVcrq/dt < 10,000 V/μs • Electrically Insulated between Input and output circuit • Microcomputer compatible - Very Low Trigger Current • Non-zero voltage detectors High input Sensitivity Agency Approvals A 1 6 MT2 C 2 5 NC NC 3 4 MT1 i179041 • UL - File No. E52744 System Code J • DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part Remarks BRT11-H 400 V VDRM, 2 mA IFT, DIP-6 Applications BRT12-H 600 V VDRM, 2 mA IFT, DIP-6 Industrial controls Office equipment Consumer appliances BRT13-H 800 V VDRM, 2 mA IFT, DIP-6 BRT11-M 400 V VDRM, 3 mA IFT, DIP-6 BRT12-M 600 V VDRM, 3 mA IFT, DIP-6 Description The BRT11/12/13 are AC optocouplers non-zero voltage detectors consisting of two electrically insulated lateral power ICs which integrate a thyristor system, a photo detector and noise suppression at the output and an IR GaAs diode input. BRT13-M 800 V VDRM, 3 mA IFT, DIP-6 BRT12-H-X006 600 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) BRT12-H-X007 600 V VDRM, 2 mA IFT, SMD-6 (option 7) BRT12-H-X009 600 V VDRM, 2 mA IFT, SMD-6 (option 9) BRT13-H-X006 800 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) BRT13-H-X007 800 V VDRM, 2 mA IFT, SMD-6 (option 7) BRT13-H-X009 800 V VDRM, 2 mA IFT, SMD-6 (option 9) BRT12-M-X006 600 V VDRM, 3 mA IFT, DIP-6 400 mil (option 6) For additional information on the available options refer to Option Information. Document Number 83689 Rev. 1.4, 26-Apr-04 www.vishay.com 1 BRT11/ 12/ 13 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 6 V Forward continuous current IF 20 mA IFSM 1.5 A Pdiss 30 mW Surge forward current t ≤ 10 μs Power dissipation Unit Output Parameter Test condition Repetitive peak off-state voltage Part Symbol Value Unit BRT11 VDRM 400 V BRT12 VDRM 600 V BRT13 VDRM 800 V ITRMS 300 mA RMS on-state current Single cycle surge current 50 Hz Power dissipation ITSM 3 A Pdiss 600 mW Coupler Symbol Value Unit Max. power dissipation Parameter Test condition Ptot 630 mW Ambient temperature Tamb - 40 to + 100 °C Storage temperature Tstg - 40 to + 150 °C Insulation test voltage between input/output circuit (climate in acc. with DIN 40046, part 2, Nov. 74) VISO 5300 VRMS Reference voltage in acc. with VDE 0110 b Vref 500 VRMS Reference voltage in acc. with VDE 0110 b (insulation group C) Vref 600 VDC 1) Creepage resistance (in acc. with DIN IEC 112/VDE 0303, part 1) (group IIIa acc. to DIN VDE 0109) CTI 175 Insulation resistance VIO = 500 V, Tamb = 25 ° C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 ° C RIO ≥ 1011 Ω DIN humidity category, DIN 40 040 F Creepage distance (input/output circuit) ≥ 7.2 mm Clearance (input/output circuit) ≥ 7.2 mm 1) Test AC voltage in acc. with DIN 57883, June 1980 www.vishay.com 2 Document Number 83689 Rev. 1.4, 26-Apr-04 BRT11/ 12/ 13 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Typ. Max 1.1 1.35 V IR 10 μA Rthja 750 °C/W Forward voltage IF = 10 mA VF Reverse current VR = 6 V Thermal resistance 2) junction - ambient 2) Min Unit Static air, SITAC soldered in pcb or base plate. Output Parameter Critical rate of rise of off-state voltage Critical rate of rise of voltage at current commutation Symbol Min VD = 0.67 VDRM, TJ = 25 °C Test condition dV/dtcr 10 kV/μs VD = 0.67 VDRM, TJ = 80 °C dV/dtcr 5 kV/μs VD = 0.67 VDRM, TJ = 25 °C, dI/dtcrq ≤ 15 A/ms dV/dtcrq 10 kV/μs VD = 0.67 VDRM, TJ = 80 °C, dI/dtcrq ≤ 15 A/ms dV/dtcrq 5 kV/μs dI/dtcr 8 A/μs Critical rate of rise of on-state current Typ. Max Unit Pulse current tp ≤ 5 μs, f 0 100 Hz, dItp/dt ≤ 8 A/μs Itp 2 A On-state voltage IT = 300 mA VT 2.3 V Off-state current TC = 80 °C, VDRM ID 0.5 100 μA Holding current VD = 10 V IH 80 500 μA Thermal resistance 2) junction ambient RthJA 125 °C/W 2) Rthja Static air, SITAC soldered in pcb or base plate. Coupler Parameter Trigger current Symbol Min Max Unit VD = 10 V, H - Versions Test condition IFT 0.4 2 mA VD = 10 V, M - Versions IFT 0.8 3 mA 14 μA/°C 2 pF ΔIFT/ΔTj Trigger current temperature gradient Capacitance (input-output) Document Number 83689 Rev. 1.4, 26-Apr-04 VR = 0 V, f = 1 kHz CIO Typ. 7 www.vishay.com 3 BRT11/ 12/ 13 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) tgd=f(IF/IFT25°C) VD=200V IFTN=f(tpIF) IFTN normalized to IFT refering to tpIF ≥ 1 m Vop=220V,f= 4 0 ...60Hz typ. 17242 17239 Fig. 1 Typical Trigger Delay Time Fig. 4 Pulse Trigger Current IF = ƒ(VF) Ptot= (ITRMS) 17240 17243 Fig. 2 Power Dissipation 40 to 60 Hz Line Operation Fig. 5 Typical Input Characteristics IT = ƒ(VT) ID=f(Tj) VD=800V 17241 Fig. 3 Typical Off-State Current www.vishay.com 4 17244 Fig. 6 Typical Output Characteristics Document Number 83689 Rev. 1.4, 26-Apr-04 BRT11/ 12/ 13 VISHAY Vishay Semiconductors ITRMS = ƒ(TA) RthJA = 125 K/W 3) ITRMS = ƒ(TPIN5) RthJ-PIN5 = 16,5 K/W 4) 17246 17245 Fig. 7 Current Reduction Fig. 8 Current Reduction Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ . .018 (0.46) .020 (0.51) i178014 Document Number 83689 Rev. 1.4, 26-Apr-04 .300 (7.62) typ. .048 (1.22) .052 (1.32) .130 (3.30) .150 (3.81) 18° .033 (0.84) typ. .033 (0.84) typ. .100 (2.54) typ 3°–9° .008 (.20) .012 (.30) .130 (3.30) .150 (3.81) .300–.347 (7.62–8.81) www.vishay.com 5 BRT11/ 12/ 13 VISHAY Vishay Semiconductors Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 6 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83689 Rev. 1.4, 26-Apr-04 BRT11/ 12/ 13 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83689 Rev. 1.4, 26-Apr-04 www.vishay.com 7